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DMC3400SDW PDF даташит

Спецификация DMC3400SDW изготовлена ​​​​«Diodes» и имеет функцию, называемую «COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET».

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Номер произв DMC3400SDW
Описание COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Производители Diodes
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DMC3400SDW Даташит, Описание, Даташиты
DMC3400SDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
Q1 30
Q2 -30
RDS(ON) max
0.4Ω @ VGS = 10V
0.7Ω @ VGS = 4.5V
0.9Ω @ VGS = -10V
1.7Ω @ VGS = -4.5V
ID max
TA = +25°C
0.65A
0.52A
-0.45A
-0.33A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making
it ideal for high efficiency power management applications.
Motor Control
Power Management Functions
DC-DC Converters
SOT363
G1
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
D1
G2
D2
D1 G2 S2
ESD PROTECTED
Top View
Gate Protection
Diode
S1
Q1 N-CHANNEAL
Gate Protection
Diode
S2
Q2 P-CHANNEAL
S1 G1 D2
Top View
Pin out
Ordering Information (Note 4)
Notes:
Part Number
DMC3400SDW-7
DMC3400SDW-13
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
CSI
CSI = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: B = 2014)
M = Month (ex: 9 = September)
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
1 of 9
www.diodes.com
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
February 2015
© Diodes Incorporated









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DMC3400SDW Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
TA = +25C
TA = +70C
Symbol
VDSS
VGSS
ID
IS
IDM
Value_Q1
30
±20
0.65
0.50
0.4
4
DMC3400SDW
Value_Q2
-30
±20
-0.45
-0.36
-0.35
-3
Units
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.31
406
0.39
319
126
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics N Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
30
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.2
0.3
0.8
55
8.5
6.5
92
0.6
1.4
0.2
0.1
3.8
3.5
25.2
18.8
Max
-
1
±10
1.6
0.4
0.7
1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
μA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.59A
VGS = 4.5V, ID = 0.2A
V VGS = 0V, IS = 0.23A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
VDS = VGS = 0V, f = 1.0MHz
nC
nC VDS = 10V,
nC ID = 250mA
nC
ns
ns VGS = 10V, VDS = 30V,
ns ID = 100mA, RG = 1Ω
ns
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
2 of 9
www.diodes.com
February 2015
© Diodes Incorporated









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DMC3400SDW Даташит, Описание, Даташиты
DMC3400SDW
Electrical Characteristics P Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
-30
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.36
0.57
-0.8
54
10
8.3
240
0.6
1.3
0.2
0.2
5.7
8.8
35
19
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
-
-1
±10
-2.6
0.9
1.7
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -24V, VGS = 0V
μA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -10V, ID = -0.42A
VGS = -4.5V, ID = -0.2A
V VGS = 0V, IS = -0.23A
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
VDS = VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = -10V, ID = -0.24A
nC
ns
ns VGS = -10V, VDD = -15V,
ns ID = -0.5A, RG = 1Ω
ns
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
3 of 9
www.diodes.com
February 2015
© Diodes Incorporated










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