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PDF DMC2990UDJ Data sheet ( Hoja de datos )
| Número de pieza | DMC2990UDJ | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMC2990UDJ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Device V(BR)DSS
Q1 20V
Q2 -20V
RDS(ON) max
0.99Ω @ VGS = 4.5V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
1.9Ω @ VGS = -4.5V
2.4Ω @ VGS = -2.5V
3.4Ω @ VGS = -1.8V
5Ω @ VGS = -1.5V
ID max
TA = +25°C
450mA
400mA
330mA
300mA
-310mA
-280mA
-240mA
-180mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
SOT963
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
Low Package Profile, 0.45mm Maximum Package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.027 grams (approximate)
D1 G2 S2
ESD PROTECTED
Top View
S1 G1 D2
Top View
Schematic and
Transistor Diagram
Ordering Information (Note 5 & 6)
Notes:
Part Number
DMC2990UDJ-7
DMC2990UDJ-7B
Case
SOT963
SOT963
Packaging
10K/Tape & Reel
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details.
6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
D1 D1 = Product Type Marking Code
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
1 of 9
www.diodes.com
March 2013
© Diodes Incorporated
1 page  
1.2
1.0
0.8 ID = 1mA
0.6 ID = 250µA
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
f = 1MHz
40
30
Ciss
20
10
Coss
0 Crss
0 5 10 15 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
8
6
4
2
VDS = 10V
00 0.2 0.4 0.6 0.8 1
QG - (nC)
Fig. 11 Gate Charge Characteristics
DMC2990UDJ
1.0
0.8
0.6 TA= 25°C
0.4
0.2
0
0 0.2 0.4
0.6 0.8 1.0 1.2
VSD, SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
1
RDS(on)
Limited
DC
PW = 10s
0.1 PW = 1s
PW = 100µs
PW = 100ms
PW = 10ms
PW = 1ms
PW = 10µs
0.01
TJ(MAX) = 150°C
TA = 25°C
Single Pulse
0.001
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE
Fig. 12 SOA, Safe Operation Area
100
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
5 of 9
www.diodes.com
March 2013
© Diodes Incorporated
5 Page | ||
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