VS-6ESH06HM3 Datasheet PDF - Vishay
| Part Number | VS-6ESH06HM3 | |
| Description | Hyperfast Rectifier | |
| Manufacturers | Vishay | |
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There is a preview and VS-6ESH06HM3 download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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www.vishay.com
VS-6ESH06HM3
Vishay Semiconductors
Hyperfast Rectifier, 6 A FRED Pt®
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC, CRM/CCM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
TO-277A (SMPC)
6A
600 V
1.8 V
33 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in PFC, boost, lighting,
in the AC/DC section of SMPS, freewheeling and clamp
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TSp = 145 °C
TJ = 25 °C
VALUES
600
6
90
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
Forward voltage
IF = 6 A
VF
IF = 6 A, TJ = 150 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 600 V
-
TYP.
-
1.30
1.05
-
50
8
MAX.
-
1.80
1.55
5
300
-
UNITS
V
μA
pF
Revision: 26-Nov-14
1 Document Number: 94985
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
Outline Dimensions
Vishay Semiconductors
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.030 (0.75) NOM.
0.268
(6.80)
0.041
(1.04)
Conform to JEDEC® TO-277A
0.186 (4.72)
MIN.
0.050 (1.27)
MIN.
0.055 (1.40)
MIN.
Revision: 03-Sep-14
1 Document Number: 95570
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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