DataSheet26.com

AP2602MT PDF даташит

Спецификация AP2602MT изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP2602MT
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

6 Pages
scroll

No Preview Available !

AP2602MT Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP2602MT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
D
Ultra Low On-resistance
RoHS Compliant & Halogen-Free
G
Description
S
AP2602 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
25V
0.99mΩ
260A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25
+20
260
57.3
45.8
650
104
5
45
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
/W
/W
1
201501202









No Preview Available !

AP2602MT Даташит, Описание, Даташиты
AP2602MT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=1mA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=20V, VGS=0V
VGS=+20V, VDS=0V
ID=20A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=15V
f=1.0MHz
f=1.0MHz
25 - - V
- 0.85 0.99 mΩ
- 1.15 1.3 mΩ
0.9 - 2.2 V
- 135 -
S
- - 10 uA
- - +100 nA
- 78 125 nC
- 13 - nC
- 38 - nC
- 16 - ns
- 18 - ns
- 120 - ns
- 95 - ns
- 7300 11680 pF
- 1400 - pF
- 790 - pF
- 1.2 2.4 Ω
Source-Drain Diode
Symbol
Parameter
IS Source Current ( Body Diode )
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 60 A
- - 1.2 V
- 60 - ns
- 70 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 60oC/W at steady state.
4.Package limitation current is 60A .
5.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









No Preview Available !

AP2602MT Даташит, Описание, Даташиты
AP2602MT
240
T C =25 o C
200
10V
7.0V
160
6.0V
5.0V
120 4.0V
V G = 3.0V
80
40
0
0
0.4 0.8 1.2 1.6
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
120
T C = 150 o C
100
10V
7.0V
80 6.0V
5.0V
4.0V
60
V G = 3.0V
40
20
0
001122
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.3
I D = 20 A
T C =25 o C
1.2
1.1
.
1
0.9
0.8
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
1.8
I D =20A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-100 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =1mA
1.6
150
1.2
0.8
0.4
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.0
-100
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










Скачать PDF:

[ AP2602MT.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
AP2602MTN-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск