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VS-52CPQ030PbF PDF даташит

Спецификация VS-52CPQ030PbF изготовлена ​​​​«Vishay» и имеет функцию, называемую «Schottky Rectifier ( Diode )».

Детали детали

Номер произв VS-52CPQ030PbF
Описание Schottky Rectifier ( Diode )
Производители Vishay
логотип Vishay логотип 

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VS-52CPQ030PbF Даташит, Описание, Даташиты
www.vishay.com
VS-52CPQ030PbF, VS-52CPQ030-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 25 A
Base
common
cathode
2
TO-247AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
13
Anode
1
2
Anode
2
Common
cathode
TO-247AC
2 x 25 A
30 V
0.38 V
450 mA at 125 °C
150 °C
Common cathode
27 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-52CPQ030... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 25 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
50
30
2180
0.38
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-52CPQ030PbF VS-52CPQ030-N3
30 30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 132 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 6 A, L = 1.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
25
50
2180
600
27
6
UNITS
A
mJ
A
Revision: 31-Aug-11
1 Document Number: 94237
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

VS-52CPQ030PbF Даташит, Описание, Даташиты
www.vishay.com
VS-52CPQ030PbF, VS-52CPQ030-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
25 A
50 A
25 A
50 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.48
0.55
0.38
0.49
1.9
450
0.24
5.05
4600
7.5
10000
UNITS
V
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
RthJC
DC operation
See fig. 4
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC (JEDEC)
VALUES
- 55 to 150
UNITS
°C
0.8
0.4 °C/W
0.25
6g
0.21 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
52CPQ030
Revision: 31-Aug-11
2 Document Number: 94237
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

VS-52CPQ030PbF Даташит, Описание, Даташиты
www.vishay.com
VS-52CPQ030PbF, VS-52CPQ030-N3
Vishay Semiconductors
1000
100
10 TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
10 000
TJ = 25 °C
1000
100
10
1
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.01
0
5 10 15 20 25 30
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
0
5 10 15 20 25 30 35
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
10
Revision: 31-Aug-11
3 Document Number: 94237
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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