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VS-4CSH02-M3 PDF даташит

Спецификация VS-4CSH02-M3 изготовлена ​​​​«Vishay» и имеет функцию, называемую «Hyperfast Rectifier».

Детали детали

Номер произв VS-4CSH02-M3
Описание Hyperfast Rectifier
Производители Vishay
логотип Vishay логотип 

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VS-4CSH02-M3 Даташит, Описание, Даташиты
www.vishay.com
VS-4CSH02-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 2 A FRED Pt®
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specific for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
TO-277A (SMPC)
2x2A
200 V
0.95 V
24 ns
175 °C
Dual die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
Non-repetitive peak surge current
per device
per diode
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TSp = 165 °C
TJ = 25 °C
VALUES
200
4
2
90
50
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
200
Forward voltage, per diode
IF = 2 A
VF
IF = 2 A, TJ = 125 °C
-
-
Reverse leakage current, per diode
VR = VR rated
IR
TJ = 125 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 200 V
-
TYP.
-
0.88
0.75
-
1
8
MAX.
-
0.95
0.82
2
8
-
UNITS
V
μA
pF
Revision: 25-Nov-14
1 Document Number: 94976
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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VS-4CSH02-M3 Даташит, Описание, Даташиты
www.vishay.com
VS-4CSH02-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 2 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 125 °C
-
-
-
-
-
-
-
-
24
-
16
22
2
3
16
30
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance, junction
to solder pad, per diode
TJ, TStg
RthJ-Sp
Approximate weight
Marking device
Case style TO-277A (SMPC)
MIN.
-65
-
TYP.
-
MAX.
175
4.5 5.5
0.1
0.0035
JCH2
UNITS
°C
°C/W
g
oz.
100
10 TJ = 175 °C
1
0.1
0.4
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.8 1.2 1.6 2.0
VF - Forward Voltage Drop (V)
2.4
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10 175 °C
1 150 °C
125 °C
0.1
0.01
0.001
25 °C
0.0001
0
50 100 150 200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 25-Nov-14
2 Document Number: 94976
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

VS-4CSH02-M3 Даташит, Описание, Даташиты
www.vishay.com
100
10
1
0 50 100 150 200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
VS-4CSH02-M3
Vishay Semiconductors
3
RMS limit
2.5
2
1.5 D = 0.02
D = 0.05
D = 0.1
1 D = 0.2
D = 0.5
0.5 DC
0
0 0.5 1 1.5 2 2.5 3 3.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
175
170 DC
165
Square wave (D = 0.50)
80 % rated VR applied
160
See note (1)
155
0 0.5 1 1.5 2 2.5
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
35
30
25
20 25 °C
15
10 125 °C
5
0
100
1000
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
45
40
35 125 °C
30
25
25 °C
20
15
10
100
dIF/dt (A/μs)
1000
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 25-Nov-14
3 Document Number: 94976
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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