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SS19L PDF даташит

Спецификация SS19L изготовлена ​​​​«Silicon Standard» и имеет функцию, называемую «Schottky Barrier Rectifiers».

Детали детали

Номер произв SS19L
Описание Schottky Barrier Rectifiers
Производители Silicon Standard
логотип Silicon Standard логотип 

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SS19L Даташит, Описание, Даташиты
SS12L thru SS115L
Schottky Barrier Rectifiers
PRODUCT SUMMARY
1.0 Amp. Surface Mount
FEATURES
For surface mounted application
Low-Profile Package
Ideal for automated pick & place
Low power loss, high efficiency 
High current capability, low VF 
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0 
Epitaxial construction
High temperature soldering: 260 oC / 10 seconds at
terminals
MECHANICAL DATA
Cases: Sub SMA plastic case 
Terminal : Pure tin plated, lead free. 
Polarity: Color band denotes cathode end
Packaging: 12mm tape per EIA STD RS-481
Weight approx. 15mg
Sub SMA
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
08/22/2007 Rev.1.00
www.SiliconStandard.com
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SS19L Даташит, Описание, Даташиты
SS12L thru SS115L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS SS Units
12L 13L 14L 15L 16L 19L 110L 115L
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 V
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70 105 V
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100 150 V
Marking Code (Note 2)
12LYM 13LYM 14LYM 15LYM 16LYM 19LYM 10LYM A5LYM
Maximum Average Forward Rectified
Current
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on IFSM 30 A
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
@ 0.5A
@ 1.0A
VF 0.385 0.43 0.51
0.45 0.50 0.55
0.58
0.70
0.65 0.75 V
0.80
0.90
Maximum DC Reverse Current
@ TA =25 oC at Rated DC Blocking
Voltage @ TA=100 oC
IR
8.0
0.4
6.0
0.05 mA
0.5 mA
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
RθJA
RθJL
TJ
TSTG
100
45
-55 to +150
-55 to + 150
oC/W
oC
oC
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle.
2. 12LYM: 1-1A, 2-20V, L-Low Profile, Y-Year Code, M-Month Code.
3. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
08/22/2007 Rev.1.00
www.SiliconStandard.com
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SS19L Даташит, Описание, Даташиты
SS12L thru SS115L
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20 40
60
80
100 120
140 160
LEAD TEMPERATURE. (oC)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
50
SS15L-SS16L
20
SS13L-SS14L
10
5 SS12L
2 SS115L
1
0.5
0.2
0.1 SS19L-SS110L
0.05
0.02
0.01
0.2 0.4 0.6 0.8
1.0 1.2
1.4 1.6
FORWARD VOLTAGE. (V)
1.8
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
50 Tj=25OC
f=1.0MHz
Vsig=50mVp-p
20
10
5
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
50
20
10
5
2 8.3ms Single
Half Sine Wave
Tj=Tj max
1
12
5 10 20
NUMBER OF CYCLES AT 60Hz
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
10,000
100
1,000
100
TJ
=
O
100
C
TJ = 75O C
10
TJ
=
O
25
C
1
0.1
0
20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
140
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10
1
2
1 0.1
1.0 10 100
REVERSE VOLTAGE. (V)
1000
0.1
0.01
0.1 1 10
T, PULSE DURATION. (sec)
100
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
08/22/2007 Rev.1.00
www.SiliconStandard.com
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