DataSheet26.com

SS23M PDF даташит

Спецификация SS23M изготовлена ​​​​«Taiwan Semiconductor» и имеет функцию, называемую «Surface Mount Schottky Barrier».

Детали детали

Номер произв SS23M
Описание Surface Mount Schottky Barrier
Производители Taiwan Semiconductor
логотип Taiwan Semiconductor логотип 

4 Pages
scroll

No Preview Available !

SS23M Даташит, Описание, Даташиты
CREAT BY ART
Surface Mount Schottky Barrier
FEATURES
- Very low profile - typical height of 0.68mm
- Low power loss, high efficiency
- Ideal for automated placement
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SS22M thru SS24M
Taiwan Semiconductor
MECHANICAL DATA
Case: Micro SMA
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.006 g (approximately)
Micro SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL SS22M
SS23M
SS24M
Marking code
DEF
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
VRRM
20
30
40
IF(AV)
2
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
25
Maximum instantaneous forward voltage (Note 1)
@ 2.0A / TJ=25°C
@ 2.0A / TJ=125°C
VF
0.60
0.55
Maximum reverse current @ rated VR
@ TJ=25
@ TJ=125
IR
Typical junction capacitance (Note 2)
CJ
Typical thermal resistance
RθJL
RθJC
RθJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
TJ
TSTG
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
150
15
35
15
20
105
-55 to +150
-55 to +150
UNIT
V
A
A
V
μA
mA
pF
°C/W
°C
°C
Document Number: DS_D1410055
Version: I14









No Preview Available !

SS23M Даташит, Описание, Даташиты
CREAT BY ART
ORDERING INFORMATION
PART NO. PACKING CODE
PACKING CODE
SS2xM
(Note 1, 2)
RS
SUFFIX
G
Note 1: "x" defines voltage from 20V (SS22M) to 40V (SS24M)
Note 2: Whole series with green compound
PACKAGE
Micro SMA
EXAMPLE
PREFERRED
PART NO.
SS24M RSG
PART NO.
SS24M
PACKING CODE
RS
PACKING CODE
SUFFIX
G
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
SS22M thru SS24M
Taiwan Semiconductor
PACKING
3,000 / 7" Plastic reel
DESCRIPTION
Green compound
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
2.4
2
1.6
1.2
0.8
0.4
0
80
90 100 110 120 130 140 150
LEAD TEMPERATURE (oC)
40
30
20
10
0
1
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
8.3ms Single Half Sin Wave
JEDEC method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
10
TJ=150
TJ=125
1
TJ=25
0.1
0 0.2 0.4 0.6 0.8 1 1.2
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
TJ=150
10
1
TJ=125
0.1
0.01
TJ=25
0.001
0.0001
10
SS22M
SS23M-SS24M
20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1410055
Version: I14









No Preview Available !

SS23M Даташит, Описание, Даташиты
1000
CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
10
1
0.1
1 10
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
Micro SMA
100
SS22M thru SS24M
Taiwan Semiconductor
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
1000
100
10
1
0.01
0.1 1 10
T-PULSE DURATION(s)
100
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min Max
2.30 2.70
2.10 2.30
0.63 0.73
0.10 0.20
1.15 1.35
0.65 0.85
1.15 1.35
0.75 0.95
1.10 1.50
0.55 0.75
0.55 0.75
0.65 0.85
Unit (inch)
Min
0.091
Max
0.106
0.083 0.091
0.025 0.029
0.004 0.008
0.045 0.053
0.026 0.034
0.045 0.053
0.030 0.037
0.043 0.059
0.022 0.030
0.022 0.030
0.026 0.034
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N =
YW =
Marking code
Date Code
Symbol
A
B
C
D
E
Unit (mm)
1.1
2.0
0.5
0.8
1.0
Unit (inch)
0.043
0.079
0.020
0.031
0.039
Document Number: DS_D1410055
Version: I14










Скачать PDF:

[ SS23M.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SS232.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERSGW
GW
SS23(SS22 - SS210) 2 Amp Schottky RectifierMCC
MCC
SS23(SS22 - S210) Schottky RectifiersFairchild Semiconductor
Fairchild Semiconductor
SS23Surface Mount Schottky Barrier RectifierVishay
Vishay

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск