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PDF SS22M Data sheet ( Hoja de datos )
| Número de pieza | SS22M | |
| Descripción | Surface Mount Schottky Barrier | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SS22M (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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CREAT BY ART
Surface Mount Schottky Barrier
FEATURES
- Very low profile - typical height of 0.68mm
- Low power loss, high efficiency
- Ideal for automated placement
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SS22M thru SS24M
Taiwan Semiconductor
MECHANICAL DATA
Case: Micro SMA
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.006 g (approximately)
Micro SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL SS22M
SS23M
SS24M
Marking code
DEF
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
VRRM
20
30
40
IF(AV)
2
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
25
Maximum instantaneous forward voltage (Note 1)
@ 2.0A / TJ=25°C
@ 2.0A / TJ=125°C
VF
0.60
0.55
Maximum reverse current @ rated VR
@ TJ=25 ℃
@ TJ=125 ℃
IR
Typical junction capacitance (Note 2)
CJ
Typical thermal resistance
RθJL
RθJC
RθJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
TJ
TSTG
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
150
15
35
15
20
105
-55 to +150
-55 to +150
UNIT
V
A
A
V
μA
mA
pF
°C/W
°C
°C
Document Number: DS_D1410055
Version: I14
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SS22M.PDF ] | |
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