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PDF NCE60R2K2K Data sheet ( Hoja de datos )

Número de pieza NCE60R2K2K
Descripción N-Channel Super Junction Power MOSFET ��
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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NCE60R2K2INCE60R2K2K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS@Tjmax
RDS(ON) TYP
ID
650
1.85
2
V
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R2K2I
TO-251
NCE60R2K2I
NCE60R2K2K
TO-252
NCE60R2K2K
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
TO-251
TO-252
Value
600
±30
2
1.3
6
23
0.184
45
1
0.06
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com v1.0

1 page




NCE60R2K2K pdf
Test circuit 
1Gate charge test circuit & Waveform
NCE60R2K2INCE60R2K2K
2Switch Time Test Circuit
3Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com v1.0

5 Page










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