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PDF NCE60R900 Data sheet ( Hoja de datos )

Número de pieza NCE60R900
Descripción N-Channel Super Junction Power MOSFET ��
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE60R900 Hoja de datos, Descripción, Manual

NCE60R900DNCE60R900, NCE60R900F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS@Tjmax
RDS(ON)
ID
650
900
5
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R900D
TO-263
NCE60R900D
NCE60R900
TO-220
NCE60R900
NCE60R900F
TO-220F
NCE60R900F
TO-263 TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID =5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
NCE60R900
NCE60R900F
NCE60R900D
600
±30
5 5*
3 3*
15 15*
48
49 29
0.39 0.23
135
2.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0

1 page




NCE60R900 pdf
NCE60R900DNCE60R900, NCE60R900F
Figure13. Transient Thermal Impedance for TO-220F
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com
v1.0

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