1N5711W PDF даташит
Спецификация 1N5711W изготовлена «WEJ» и имеет функцию, называемую «DIODE». |
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Детали детали
Номер произв | 1N5711W |
Описание | DIODE |
Производители | WEJ |
логотип |
2 Pages
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RoHS
1N5711W
TDFeatures
.,L· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Fast Switching Time
O· Low Reverse Capacitance
· Surface Mount Package Ideally Suited for
IC CAutomatic Insertion
SOD-123
2.70
3.70
ONMaximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
RPeak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
TRMS Reverse Voltage
Maximum Forward Current
CPower Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
EOperating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
Pd
RqJA
Tj, TSTG
1N5711W
70
49
15
250
600
-65 to +175
Unit
V
V
mA
mW
K/W
°C
LElectrical Characteristics @ TA = 25°C unless otherwise specified
ECharacteristic
Reverse Breakdown Voltage
Reverse Leakage Current
JForward Voltage Drop
Junction Capacitance
EReverse Recovery Time
Symbol Min Typ Max
V(BR)R
70
¾
¾
IR ¾ ¾ 200
VFM
¾
¾
0.41
1.00
Cj ¾ ¾ 2.0
trr ¾ ¾ 1.0
WNote: 1. Valid provided that terminals from the case are maintained at ambient temperature.
Unit
V
nA
V
pF
ns
Test Condition
IR = 10mA
VR = 50V
IF = 1.0mA
IF = 15mA
VR = 0V, f = 1.0MHz
IF = IR= 5.0mA
Irr = 0.1 x IR, RL = 100W
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RoHS
1N5711W
E
A1 A2
O.,LTDE1
IC CL
L1
A
CTRONSymbol
EA
A1
LA2
b
Ec
D
JE
E1
EL
W L1
Dimensions In Millimeters
Min Max
1.050
0.000
1.250
0.100
1.050
1.150
0.450
0.650
0.080
1.500
0.150
1.700
2.600
2.800
3.550
3.850
0.250
0.500REF
0.450
0° 8°
Dimensions In Inches
Min Max
0.041
0.000
0.049
0.004
0.041
0.045
0.018
0.026
0.003
0.059
0.006
0.067
0.102
0.110
0.140
0.152
0.010
0.020REF
0.018
0° 8°
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Номер в каталоге | Описание | Производители |
1N5711 | SMALL SIGNAL SCHOTTKY DIODE | STMicroelectronics |
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DataSheet26.com | 2020 | Контакты | Поиск |