DataSheet26.com

L2SC4083NT3G PDF даташит

Спецификация L2SC4083NT3G изготовлена ​​​​«Leshan Radio Company» и имеет функцию, называемую «High-Frequency Amplifier Transistor».

Детали детали

Номер произв L2SC4083NT3G
Описание High-Frequency Amplifier Transistor
Производители Leshan Radio Company
логотип Leshan Radio Company логотип 

2 Pages
scroll

No Preview Available !

L2SC4083NT3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SC4083NT1G
Series
S-L2SC4083NT1G
Series
Ordering Information
Device
L2SC4083NT1G
S-L2SC4083NT1G
L2SC4083NT3G
S-L2SC4083NT3G
L2SC4083PT1G
S-L2SC4083PT1G
L2SC4083PT3G
S-L2SC4083PT3G
L2SC4083QT1G
S-L2SC4083QT1G
L2SC4083QT3G
S-L2SC4083QT3G
Marking
N01
N01
H01
H01
P01
P01
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
SC-74
Absolute maximum ratings (Ta=25 oC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
20
11
3
50
0.2
150
- 55~+150
Unit
V
V
V
mA
W
oC
oC
See Table
Electrical characteristics (Ta=25 oC)
Parameter
Symbol
Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
rbb'·Cc
NF
20
11
3
56
1.4
Typ.
3.2
0.8
4
3.5
Max.
0.5
0.5
0.5
270
1.5
12
Unit
V
V
V
uA
uA
V
GHz
pF
ps
dB
Conditions
IC = 10 µA
IC = 1mA
IE = 10 µA
VCB = 10V
VEB = 2V
IC/IB = 10mA/5mA
VCE/IC = 10V/5mA
VCB = 10V , IC = 10mA , f = 500MHz
VCB = 10V , IE = 0A , f = 1MHz
VCB = 10V , IC = 10mA , f = 31.8MHz
VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50
CLASSIFICATION OF hFE
Rank
N
Range
56-120
P
82-180
Q
120-270
Rev.O 1/2









No Preview Available !

L2SC4083NT3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
L2SC4083NT1G Series
S-L2SC4083NT1G Series
D
65 4
HE 1 2 3
E
b
e
0.05 (0.002)
A1
A
SC−74
q
C
L
MILLIMETERS
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.01 0.06 0.10
b 0.25 0.37 0.50
c 0.10 0.18 0.26
D 2.90 3.00 3.10
E 1.30 1.50 1.70
e 0.85 0.95 1.05
L 0.20 0.40 0.60
HE 2.50 2.75 3.00
q 0° − 10°
INCHES
MIN NOM MAX
0.035 0.039 0.043
0.001 0.002 0.004
0.010 0.015 0.020
0.004 0.007 0.010
0.114 0.118 0.122
0.051 0.059 0.067
0.034 0.037 0.041
0.008 0.016 0.024
0.099 0.108 0.118
0° − 10°
2.4
0.094
1.9
0.074
0.7
0.028
1.0
0.039
0.95
0.037
0.95
0.037
ǒ ǓSCALE 10:1
mm
inches
Rev.O 2/2










Скачать PDF:

[ L2SC4083NT3G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
L2SC4083NT3GHigh-Frequency Amplifier TransistorLeshan Radio Company
Leshan Radio Company

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск