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SSY5829P PDF даташит

Спецификация SSY5829P изготовлена ​​​​«SeCoS» и имеет функцию, называемую «P-Channel Enhancement MOSFET».

Детали детали

Номер произв SSY5829P
Описание P-Channel Enhancement MOSFET
Производители SeCoS
логотип SeCoS логотип 

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SSY5829P Даташит, Описание, Даташиты
Elektronische Bauelemente
SSY5829P
-2.5 A, -20 V, RDS(ON) 0.110
P-Channel Enhancement MOSFET
With Schottky Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
RDS(on) and to ensure minimal power loss and
heat dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers,PCMCIA cards, cellular and cordless telephones.
1206-8CF
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
1206-8CF saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
1206-8CF
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
2.00
3.00
3.00
0.65
Max.
2.10
3.05
3.05
0.70
1.95 2.00
0.70 0.90
REF.
M
a
b
L
L1
Millimeter
Min.
0.08
1.70
0.24
0.20
Max.
0.25
1.73
0.35
0.40
0 0.1
   
CCD D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current(TJ=150°C )(MOSFET) 1
TA=25°C
TA=70°C
Pulsed Drain Current (MOSFET) 2
Continuous Source Current (MOSFET Diode Conduction) 1
Average Forward Current (Schottky)
Pulse Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)1
TA=25°C
TA=70°C
Maximum Power Dissipation (Schottky)1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VKA
VGS
ID
IDM
IS
IF
IFM
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t5 sec
Steady State
RθJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
A ASG
   
Ratings
-20
20
±8
-2.5
-1.9
-10
-1.6
0.5
8
2.1
1.1
1.3
0.68
-55 ~ 150
50 60
90 110
Unit
V
V
V
A
A
A
A
A
W
°C
°C/W
Any changes of specification will not be informed individually.
Page 1 of 4









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SSY5829P Даташит, Описание, Даташиты
Elektronische Bauelemente
SSY5829P
-2.5 A, -20 V, RDS(ON) 0.110
P-Channel Enhancement MOSFET
With Schottky Diode
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-State Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gFS
VSD
Static
-0.4 -
-
- - ±100
- - -1
- - -10
-5 -
-
- - 0.110
- - 0.160
-3-
- -0.70 -
Dynamic 2
V VDS = VGS, ID = -250μA
nA VDS = 0V, VGS= ±8V
μA VDS = -16V, VGS= 0V
VDS = -16V, VGS= 0V, TJ=55°C
A VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID = -3.6A
VGS= -2.5V, ID = -3.0A
S VDS= -5V,,ID = -3.6A
V IS= -1.6A, VGS=0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(ON)
Tr
Td(OFF)
Tf
- 6.0 -
- 0.80 -
- 1.30 -
- 6.5 -
- 20 -
- 31 -
- 21 -
ID= -3.6A
nC VDS= -5V
VGS= -4.5V
VDD= -5V
nS
VGEN= -4.5V
RG= 6
RL= 5
SCHOTTKY SPECIFICATIONS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Forward Voltage Drop 1
VF
Maximum Reverse Leakage Current
IRM
Junction Capacitance
CT
Notes:
1. Pulse testPW 300 us duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
-
-
-
-
-
-
- 0.48
IF= 0.5A
V
- 0.4
IF= 0.5A, TJ=125°C
- 0.1
Vr= 30V
- 1 mA Vr= 30V, TJ=75°C
- 10
Vr= 30V, TJ=125°C
31 - pF Vr= 10V
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4









No Preview Available !

SSY5829P Даташит, Описание, Даташиты
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSY5829P
-2.5 A, -20 V, RDS(ON) 0.110
P-Channel Enhancement MOSFET
With Schottky Diode
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4










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SSY5829PP-Channel Enhancement MOSFETSeCoS
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