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2DB1697 PDF даташит

Спецификация 2DB1697 изготовлена ​​​​«Diodes» и имеет функцию, называемую «PNP SURFACE MOUNT TRANSISTOR».

Детали детали

Номер произв 2DB1697
Описание PNP SURFACE MOUNT TRANSISTOR
Производители Diodes
логотип Diodes логотип 

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2DB1697 Даташит, Описание, Даташиты
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type Available (2DD2661)
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
2DB1697
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.052 grams (approximate)
SOT89
Top View
COLLECTOR
2, 4
1
BASE
3
EMITTER
Device Schematic
3E
C4 2C
1B
Top View
Pin Out Configuration
Ordering Information (Note 3)
Part Number
2DB1697-13
Marking
1697
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YWW
1697
1697 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code (01 – 53)
2DB1697
Document number: DS31618 Rev. 3 - 2
1 of 5
www.diodes.com
April 2012
© Diodes Incorporated









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2DB1697 Даташит, Описание, Даташиты
2DB1697
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
-15
-12
-6
-4
-2
Unit
V
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 6)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
-15
-12
-6
270
Output Capacitance
Cobo
Current Gain-Bandwidth Product
fT
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Typ
-65
40
140
Max
-0.1
-0.1
-180
680
Unit
V
V
V
μA
μA
mV
pF
MHz
Conditions
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -15V, IE = 0
VEB = -6V, IC = 0
IC = -1A, IB = -50mA
VCE = -2V, IC = -200mA
VCB = -10V, IE = 0,
f = 1MHz
VCE = -2V, IC = -100mA,
f = 100MHz
2DB1697
Document number: DS31618 Rev. 3 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated









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2DB1697 Даташит, Описание, Даташиты
2.0
1.6
1.2
Note 5
0.8
0.4 Note 4
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
10,000
VCE = -4V
2DB1697
2.0
1.8
IB = -5mA
1.6
1.4 IB = -4mA
1.2
IB = -3mA
1.0
0.8 IB = -2mA
0.6
0.4 IB = -1mA
0.2
0
01 2 3 4
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 20
TA = 150°C
1,000
TA = 85°C
TA = 25°C
TA = -55°C
0.1
0.01
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
100
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = -4V
1.0
0.001
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2 TA = 150°C
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1697
Document number: DS31618 Rev. 3 - 2
3 of 5
www.diodes.com
April 2012
© Diodes Incorporated










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