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PDF 1N5768 Data sheet ( Hoja de datos )
| Número de pieza | 1N5768 | |
| Descripción | MONOLITHIC AIR ISOLATED DIODE ARRAY | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
1N5768
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
• HERMETIC CERAMIC PACKAGE
• Bv > 60V at 10uA
• Ir < 100nA at 40V
• C < 4.0 pF
Absolute Maximum Ratings:
Symbol
Parameter
Limit Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3 Continuous Forward Current
IFSM
*1 Peak Surge Current (tp= 1/120 s)
PT1 *4 Power Dissipation per Junction @ 25°C
PT2 *4 Power Dissipation per Package @ 25°C
Top Operating Junction Temperature Range
Tstg Storage Temperature Range
60 Vdc
300 mAdc
500 mAdc
400 mW
500 mW
-65 to +150 °C
-65 to +200 °C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
10
.290
MAX
.019
.010
2
3
4
5
6
7
8
9
1: NOT CONNECTED
.005
MIN
.006
.003
.370
.240
.280
MAX
.260
.240
.050
.005
.370
.240
.050
BSC
.045
MAX
.090
.030
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min Max Unit
Vf1 Forward Voltage
If = 100mAdc *1
Vf2 Forward Voltage
If = 500mAdc *1
IR1 Reverse Current
VR = 40 Vdc
Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz
tfr Forward Recovery Time If = 500mAdc
trr Reverse Recovery Time If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms
1 Vdc
1.5 Vdc
0.1 uAdc
4.0 pF
40 ns
20 ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1011.PDF Rev - 11/25/98
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 1N5768.PDF ] | |
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