K3704 PDF даташит
Спецификация K3704 изготовлена «Sanyo» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK3704». |
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Детали детали
Номер произв | K3704 |
Описание | MOSFET ( Transistor ) - 2SK3704 |
Производители | Sanyo |
логотип |
4 Pages
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Ordering number : ENN7806A
2SK3704
2SK3704
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Motor drive, DC / DC Converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
*1 VDD=20V, L=200µH, IAV=45A
*2 L≤200µH, single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3704
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=23A
ID=23A, VGS=10V
ID=23A, VGS=4V
Ratings
60
±20
45
180
2.0
30
150
--55 to +150
303
45
Unit
V
V
A
A
W
W
°C
°C
mJ
A
min
60
1.2
22
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
32 S
10.5
14 mΩ
15 21 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504 TS IM TB-00000498 / 21004QA TS IM TB-00000013 No.7806-1/4
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Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2063A
10.0
3.2
4.5
2.8
2SK3704
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=45A
VDS=30V, VGS=10V, ID=45A
VDS=30V, VGS=10V, ID=45A
IS=45A, VGS=0
Ratings
min typ max
Unit
3500
pF
500 pF
350 pF
26 ns
175 ns
265 ns
210 ns
67 nC
10.6
nC
10 nC
1.0 1.2 V
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=30V
ID=23A
RL=1.3Ω
D VOUT
2SK3704
P.G 50Ω S
Unclamped Inductive Test Circuit
≥50Ω
L
DUT
10V
0V
50Ω
VDD
No.7806-2/4
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2SK3704
80 Tc=25°C
70
60
50
ID -- VDS
4V
80
VDS=10V
70
60
50
ID -- VGS
40 40
30 30
20
VGS=3V
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT06614
RDS(on) -- VGS
35
ID=23A
30
25
20
15 Tc=75°C
25°C
10
--25°C
5
10 75°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage, VGS -- V IT06615
RDS(on) -- Tc
30
25
20
15
I DI=D2=32A3,AV,GVSG=4SV=10V
10
5
0
0 12345678
Gate-to-Source Voltage, VGS -- V
yfs -- ID
100
7 VDS=10V
5
3
2
25°C
10
7
Tc=
--25°C
75°C
5
3
2
9 10
IT06616
1.0
7
5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
1000
VDD=30V
7 VGS=10V
Drain Current, ID -- A
SW Time -- ID
IT06618
5
td(off)
3
2 tf
100
7
tr
5
3 td(on)
2
0
--50 --25
100
7 VGS=0
5
3
2
0 25 50 75 100
Case Temperature, Tc -- °C
IF -- VSD
125 150
IT06617
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
10000
7
0.3 0.6 0.9 1.2 1.5
Diode Forward Voltage, VSD -- V IT06619
Ciss, Coss, Crss -- VDS
f=1MHz
5
Ciss
3
2
1000
7
5
3
2
Coss
Crss
10
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain Current, ID -- A
IT06620
100
0
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT06621
No.7806-3/4
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