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84N06CLD PDF даташит

Спецификация 84N06CLD изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOS FET».

Детали детали

Номер произв 84N06CLD
Описание N-CHANNEL POWER MOS FET
Производители Renesas
логотип Renesas логотип 

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84N06CLD Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N06CLD, NP84N06DLD, NP84N06ELD
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 6.5 mMAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 9.5 mMAX. (VGS = 5 V, ID = 35 A)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP84N06CLD
TO-220AB
NP84N06DLD
TO-262
NP84N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0)
VDSS
60
Gate to Source Voltage (VDS = 0)
VGSS
±20
Drain Current (DC) Note1
ID(DC)
±84
Drain Current (Pulse) Note2
ID(pulse)
±280
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C)
PT2
185
Channel Temperature
Tch 175
Storage Temperature
Tstg -55 to +175
Single Avalanche Current Note3
IAS Figure4
Single Avalanche Energy Note3
EAS Figure4
Repetitive Avalanche Current Note4
IAR
70
Repetitive Avalanche Energy Note4
EAR
490
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
Notes 1.
2.
3.
4.
Package Limit = ± 75 A
PW 10 µs, Duty cycle 1 %
Starting Tch = 25°C, RG = 25 , VGS = 20 V0 V
Tch 175°C, RG = 25 , VGS = 20 V0 V, Duty cycle 3%
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
0.81
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13464EJ3V0DS00 (3rd edition)
Date Published February 1999 NS CP(K)
Printed in Japan
©
1998









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84N06CLD Даташит, Описание, Даташиты
NP84N06CLD, NP84N06DLD, NP84N06ELD
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 42 A
RDS(on)2 VGS = 5 V, ID = 35 A
RDS(on)3 VGS = 4 V, ID = 35 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 35 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 35 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
Td(off)
VDD = 30 V
Fall Time
tf RG = 10
Total Gate Charge
QG ID = 70 A
Gate to Source Charge
QGS
VDD = 48 V
Gate to Drain Charge
QGD
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 70 A, VGS = 0 V
Reverse Recovery Time
trr IF = 70A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100A/µs
MIN. TYP. MAX. UNIT
5.5 6.5 m
6.4 9.5 m
7.0 10.5 m
1.0 1.5 2.0 V
20 94
S
10 µA
±10 µA
7200 10900 pF
2000 3000 pF
700 1300 pF
50 110 ns
650 1700 ns
450 900 ns
800 2000 ns
150 230 nC
19 nC
40 nC
0.97 V
80 ns
256 nC
TETESSTTCCIIRRCCUUIITT11 AAVAVLAALNACNHCE HCEAPCAABPILAITBYILITY
TETSETSCTIRCCIURICT U2 ITSW2ITSCWHIINTGCTHIMINEG TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
RG = 10
VGS
0
t
t = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
ID
90 %
90 %
10 %
td(on)
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D13464EJ3V0DS00









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84N06CLD Даташит, Описание, Даташиты
NP84N06CLD, NP84N06DLD, NP84N06ELD
TYPICAL CHRACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
100
R(DaSt(oVn)GLSim= i1te0dV)
10
TC = 25 ˚C
ID(pulse)
PW
ID(DC)
Power
=
100
DissDipCati1o0n01mL0simm1smites d
µs
10
µs
1 Single Pulse
0.1 1 10
100
VDS - Drain to Source Voltage - V
Figure5. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
10
TA = -25˚C
1 25˚C
75˚C
125˚C
VDS = 10 V
0 2 4 68
VGS - Gate to Source Voltage - V
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
210
180
150
120
90
60
30
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
800
700
600 588mJ
500
400
300 490mJ
ID = 14 A
70 A
84 A
200
100
0 71mJ
25 50
75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
Figure6. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
100
80
60
VGS =10 V
40
VGS = 4.0 V
20
0 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
Data Sheet D13464EJ3V0DS00
3










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