(PDF) 2SK1300 Datasheet - Silicon N Channel MOS FET

Número de pieza	2SK1300
Descripción	Silicon N Channel MOS FET
Fabricantes	Renesas
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No Preview Available ! 2SK1300 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 123 S REJ03G0919-0200 (Previous: ADE-208-1258) Rev.2.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.2.00 Sep 07, 2005 page 1 of 6 1 page 2SK1300 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test 16 12 8 5V 4 VGS = 10 V 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D = 1 0.5 TC = 25°C 0.3 0.2 0.1 0.1 0.05 0.02 0.03 10.S0h1ot Pulse 0.01 10 µ 100 µ θch–c (t) = γs (t) • θch–c θch–c = 3.13°C/W, TC = 25°C PDM PW T D =PTW 1 m 10 m Pulse Width PW (S) 100 m 1 10 Switching Time Test Circuit Vin Monitor D.U.T Vout Monitor RL 50 Ω Vin = 10 V VDD .=. 30 V Waveforms 90 % Vin 10 % Vout 10 % 10 % td (on) 90 % 90 % tr td (off) tf Rev.2.00 Sep 07, 2005 page 5 of 6 5 Page

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PDF 2SK1300 Data sheet ( Hoja de datos )