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PDF SPA2318Z Data sheet ( Hoja de datos )

Número de pieza SPA2318Z
Descripción POWER AMPLIFIER
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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SPA2318ZLow
Noise, High
Gain SiGe HBT
SPA2318Z
1700MHz to 2200MHz 1 WATT POWER AMP
WITH ACTIVE BIAS
Package: Exposed Pad SOIC-8
Product Description
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier housed in a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth technology which
produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure
equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an
ideal choice for multi-carrier and digital applications. The matte tin finish on the
lead-free package utilizes a post annealing process to mitigate tin whisker forma-
Optimum Technology
Matching® Applied
GaAs HBT
tion and is RoHS compliant per EU Directive 2002/95. This
package is also manufactured with green molding compounds
that contain no antimony trioxide or halogenated fire retar-
dants.
GaAs MESFET
InGaP HBT
SiGe BiCMOS
VC1
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
VBIAS
RFIN
Active
Bias
RFOUT/
VC2
Si BJT
GaN HEMT
RF MEMS
VPC2
Features
High Linearity Performance:
+21dBm IS-95 Channel
Power at -55dBc ACP;
+20.7dBm WCDMA Channel
Power at -50dBc ACP;
+47dBm Typ. OIP3
On-Chip Active Bias Control
High Gain: 24dB Typ. at
1960 MHz
Patented High Reliability
GaAs HBT Technology
Surface-Mountable Plastic
Package
Applications
WCDMA Systems
PCS Systems
Multi-Carrier Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
1700
2200
MHz
Output Power at 1dB Compression [1]
29.5
dBm
1960 MHz
29.5
dBm
2140 MHz
Adjacent Channel Power [1]
-55.0
-50.0
-47.0
dBc 1960MHz, IS-95 at POUT=21.0dBm, WCDMA at
POUT = 20.7 dBm
dBc 2140MHz
Small Signal Gain [1,2]
24.0
dB 1960MHz
21.0
23.5
24.5 dB 2140MHz
Input VSWR [1,2]
1.6:1
1960 MHz
1.6:1
2140 MHz
Output Third Order Intercept Point [2]
46.5
dBm
1960MHz, Power out per tone=+14dBm
47.0
dBm
2140 MHz
Noise Figure [1,2]
5.5 dB 1960MHz
5.5 dB 2140MHz
Device Current [1,2]
360 400 425 mA IBIAS=10mA, IC1=70mA, IC2=320mA
Device Voltage [1,2]
4.75
5.0
5.25
V
Thermal Resistance
(Junction - Lead)
31
°C/W
TL = 85°C
Test Conditions: Z0=50Temp=25°C VCC=5.0V [1] Optimal ACP tune [2] Optimal IP3 tune
DS121024
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
(+1) 336-678-5570 [email protected]
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SPA2318Z pdf
SPA2318Z
PCCPCH+PSCH+SSCH+CPICH+PICH+64DPCH, 10.5dB peak to average at 0.001% probability
W-CDMA at 2.14 GHz Adjacent Channel Power
vs. Channel Output Power
-40
W-CDMA at 2.14 GHz
-45
-50
-55
-60
25C
-65 -40C
85C
-70
16 17 18 19 20 21 22
dBm
ACP Optimized at 2140MHz Application Circuit Data, ICC=400mA, VCC=5V
21.6
T=25oC
31
30
29
28
27
26
25
2.11
0
-5
-10
-15
-20
-25
-30
-35
-40
2.11
P1dB vs Frequency
2.12
2.13
2.14
GHz
2.15
25C
85C
-40C
2.16
2.17
Input/Output Return Loss,
Isolation vs Frequency, T=25°C
S11
S12
S22
2.12
2.13
2.14
GHz
2.15
2.16
2.17
30
27
24
21
18
15
2 .1 1
Gain vs. Frequency
2 .1 2
2.13
2 .1 4
GHz
2 .1 5
25C
85C
-40C
2.16
2.17
600
500
400
300
200
100
0
0
Device Current vs. Source Voltage
25C
-4 0 C
85C
12345
Vcc (V)
6
DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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