|
|
PDF SPA2118Z Data sheet ( Hoja de datos )
| Número de pieza | SPA2118Z | |
| Descripción | POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SPA2118Z (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
SPA2118Z
850MHz 1
Watt Power
Amplifier with
Active Bias
SPA2118Z
850MHz 1 WATT POWER AMPLIFIER WITH
ACTIVE BIAS
Package: Exposed Pad SOIC-8
Product Description
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Tran-
sistor (HBT) amplifier housed in a low-cost surface-mountable plastic
package. These HBT amplifiers are fabricated using molecular beam epi-
taxial growth technology which produces reliable and consistent perfor-
mance from wafer to wafer and lot to lot. This product is specifically
designed for use as a driver amplifier for infrastructure equipment in the
850MHz band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
VC1
VBIAS
RFIN
VPC2
Active
Bias
RFOUT/
VC2
Features
High Linearity Performance
+20.7dBm, IS-95 CDMA
Channel Power at -55dBc
ACP
+47dBm Typ. OIP3
High Gain: 33dB Typ.
On-Chip Active Bias Control
Patented high Reliability GaAs
HBT Technology
Surface-Mountable Plastic
Package
Applications
IS-95 CDMA Systems
Multi-Carrier Applications
AMPS, ISM Applications
Parameter
Frequency of Operation
Output Power at 1dB Compression
Adjacent Channel Power
Min.
810
Specification
Typ.
900
29.0
-55.0
Small Signal Gain
31.5
Input VSWR
Output Third Order Intercept Point
Noise Figure
Device Current
360
Device Voltage
Thermal Resistance
(Junction - Lead)
Test Conditions: Z0=50
4.75
Temp=25°C VCC=5.0V
33.0
1.5:1
47.0
5.0
400
5.0
31
Max.
960
-52.0
34.5
425
5.25
Unit
MHz
dBm
dBc
dB
dBm
dB
mA
V
°C/W
Condition
IS-95 at 880MHz, ±885KHz offset,
POUT = 20.7 dBm
880 MHz
Power out per tone=+14dBm
IBIAS=10mA, IC1=70mA, IC2=320mA
TL = 85°C
DS121024
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
(+1) 336-678-5570 [email protected]
1 of 7
1 page  
SPA2118Z
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SPA2118Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SPA2118Z | POWER AMPLIFIER | RF Micro Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |