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PDF SPA1118Z Data sheet ( Hoja de datos )
| Número de pieza | SPA1118Z | |
| Descripción | POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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SPA1118Z
850 MHz
1Watt Power
Amplifier with
Active Bias
SPA1118Z
850MHz 1WATT POWER AMPLIFIER WITH
ACTIVE BIAS
Package: Exposed Pad SOIC-8
Product Description
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Tran-
sistor (HBT) amplifier housed in a low-cost surface-mountable plastic
package. These HBT amplifiers are fabricated using molecular beam epi-
taxial growth technology which produces reliable and consistent perfor-
mance from wafer to wafer and lot to lot. This product is specifically
designed for use as a driver amplifier for infrastructure equipment in the
850MHz band. Its high linearity makes it an ideal choice for wireless data
and digital applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
VCC
VBIAS
RFIN
N/C
Active Bias
Input
Match
N/C
N/C
RFOUT/
VCC
N/C
Features
High Linearity Performance
+21dBm IS-95 Channel
Power at -55dBc ACP
+48dBm OIP3 Typ.
On-Chip Active Bias Control
Patented High Reliability
GaAs HBT Technology
Surface-Mountable Plastic
Package
Applications
Multi-Carrier Applications
AMPS, ISM Applications
Parameter
Frequency of Operation
Output Power at 1dB Compression
Adjacent Channel Power
Small Signal Gain
Input VSWR
Output Third Order Intercept Point
Noise Figure
Device Current
Device Voltage
Thermal Resistance (junction-lead)
Test Conditions: Z0=50 VCC=5V
Specification
Min. Typ.
810
29.5
-57.0
16.2
17.2
1.5:1
48.0
7.5
275 310
4.75
5.0
35
Temp = 25°C
Max.
960
-54.0
18.2
330
5.25
°C/W
Unit
MHz
dBm
dBc
dB
dBm
dB
mA
V
Condition
IS-95 at 880MHz, ±885 KHz, POUT=21dBm
880 MHz
Power out per tone=+14dBm
TL = 85°C
DS121024
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
1 page  
SPA1118Z
850MHz to 950MHz Application Schematic
VCC
10uF,
Tantalum
22pF
392
1
2
3
4
8
7
6
5
1000pF
43pF
100 nH
Z=50 , 17°
5.6 pF
22pF
Ref. Des.
C1, C6
C2
C3
C4
C5
L1
R1
Evaluation Board Layout
Vcc
C2
C1 R1
C3
C4
L1
C5
C6
Note: Pins 4, 5, 7, 8 are not
connected internally
Value
22pF, 5%
10uF, 10%
1000pF, 5%
43pF, 5%
5.6pF, ±0.5pF
100nH, 5%
392, 1%
Sirenza Microdevices
ECB-101161 Rev. C
SOIC-8 PA
Eval Board
Vpc
Part Number
Rohm MCH18 series
AVX TAJB 106K020R
Rohm MCH18 series
Rohm MCH18 series
Rohm MCH18 series
Coilcraft 1008HQ series
Rohm MCR03 series
DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SPA1118Z.PDF ] | |
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