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SGB-2233Z PDF даташит

Спецификация SGB-2233Z изготовлена ​​​​«RF Micro Devices» и имеет функцию, называемую «DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK».

Детали детали

Номер произв SGB-2233Z
Описание DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK
Производители RF Micro Devices
логотип RF Micro Devices логотип 

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SGB-2233Z Даташит, Описание, Даташиты
PreliminarySGB-2233(Z)
DC to 4.5GHz
Active Bias
Gain Block
SGB-2233(Z)
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB-2233
product is designed for high linearity 3V gain block applications that require small
size and minimal external components. It is on chip matched to 50Ω and an exter-
Optimum Technology nal bias inductor choke is required for the application band.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
9 SiGe HBT
GaAs pHEMT
Active
NC Bias
NC
NC
NC
Si CMOS
RFIN
RFOUT
Si BJT
GaN HEMT
NC
NC
InP HBT
RF MEMS
LDMOS
Features
„ High Reliability SiGe HBT
Technology
„ Robust Class 1C ESD
„ Simple and Small Size
„ P1dB=6.7dBm at 1950MHz
„ IP3=19.0dBm at 1950MHz
„ Low Thermal
Resistance = 221 C/W
Applications
„ 3V Battery Operated Applica-
tions
„ LO Buffer Amp
„ RF Pre-Driver and RF Receive
Path
Parameter
Specification
Min. Typ.
Small Signal Gain
13.9
11.4
12.9
12.5
Output Power at 1dB Compression
7.9
5.2 6.7
6.4
Output Third Order Intercept Point
20.5
16.5
19.0
19.0
Noise Figure
4.2
Frequency of Operation
DC
Input Return Loss
13.5
19.5
Output Return Loss
12.7
16.7
Current
21.0
25.0
Thermal Resistance
221
Test Conditions: Z0=50Ω, VCC=3V, IC=25mA, T=30°C
Max.
14.4
5.2
4500
29.0
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
dB
dB
mA
°C/W
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
Condition
1950 MHz
1950 MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103079 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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SGB-2233Z Даташит, Описание, Даташиты
SGB-2233(Z)
Preliminary
Absolute Maximum Ratings
Parameter
Rating
Unit
Current (IC total)
Max Device Voltage (VD)
Max RF Input Power
60 mA
5V
20 dBm
Power Dissipation
0.2 W
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
150
-40 to + 85
- 40 to + 150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Detailed Performance Table: VCC=3V, IC=25mA, T=25°C, Z=50Ω
Parameter
Unit 100
MHz
Small Signal Gain (G)
dB 14.2
Output 3rd Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
dBm
dBm
dB 32.3
Output Return Loss (ORL)
dB 34.5
Reverse Isolation (S12)
Noise Figure (NF)
dB 17.7
dB 4.3
500
MHz
14.1
21.5
8.2
25.8
25.8
18.0
3.9
Simplified Device Schematic
16 15 14 13
850
MHz
13.9
20.5
7.9
23.4
22.0
18.2
3.9
1950
MHz
12.9
19.0
6.7
19.5
16.7
18.9
4.2
2400
MHz
12.5
19.0
6.4
18.9
16.3
19.2
4.6
3500
MHz
11.2
14.3
15.4
20.2
5.0
Active
1 Bias 12
2 11
10
3
49
56
78
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103079 Rev H









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SGB-2233Z Даташит, Описание, Даташиты
Preliminary
SGB-2233(Z)
Evaluation Board Data (VCC=VBIAS=3.0V, IC=25mA) Bias Tee substituted for DC feed inductor (L1)
16.0
15.0
14.0
13.0
12.0
11.0
10.0
0.4
Gain vs Frequency
+25c
+85c
-40C
0.9 1.4 1.9
Frequency (GHz)
2.4
24.0
22.0
20.0
18.0
16.0
14.0
12.0
10.0
0.4
OIP3 vs. Frequency
+25c
+85c
0c
-20c
-40c
0.9 1.4 1.9
Frequency (GHz)
2.4
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.4
P1dB vs. Frequency
+25c
+85c
0c
-20c
-40c
0.9 1.4 1.9
Frequency (GHz)
2.4
Noise Figure vs. Frequency
7.0
6.0
5.0
4.0
3.0 +25c
+85c
2.0
-40c
1.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Ic vs. Temperature
0.0310
0.0290
0.0270
0.0250
0.0230
0.0210
0.0190
0.0170
0.0150
+85c
+25c 0c -20c
Temperature
-40c
Current vs. Voltage
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
Vc (Volts)
EDS-103079 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 8










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Номер в каталогеОписаниеПроизводители
SGB-2233DC-4.5GHz Active Bias Gain BlockETC
ETC
SGB-2233DC to 4.5GHZ ACTIVE BIAS GAIN BLOCKRF Micro Devices
RF Micro Devices
SGB-2233ZDC - 4.5 GHz Active Bias Gain BlockSirenza Microdevices
Sirenza Microdevices
SGB-2233ZDC to 4.5GHZ ACTIVE BIAS GAIN BLOCKRF Micro Devices
RF Micro Devices

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