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SMUN5334DW PDF даташит

Спецификация SMUN5334DW изготовлена ​​​​«SeCoS» и имеет функцию, называемую «NPN / PNP Digital Small Signal Transistors».

Детали детали

Номер произв SMUN5334DW
Описание NPN / PNP Digital Small Signal Transistors
Производители SeCoS
логотип SeCoS логотип 

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SMUN5334DW Даташит, Описание, Даташиты
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
DESCRIPTION
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base−emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the SMUN5311DW series, two
complementary BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a premium.
FEATURE
Simplifies circuit design
Reduces board space
Reduces component count
Available in 8 mm, 7 inch/3000 unit tape and reel
The devices are Pb-Free
F
DG
SOT-363
A
E
L
B
K
C
H
J
6 54
Q2 R1 R2
R2
R1
Q1
12
3
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
0.650 TYP.
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)
PARAMETER
SYMBOL
VALUE
Collector - Base Voltage
Collector - Emitter Voltage
Collector Currrent – Continuous
VCBO
50
VCEO
50
IC 100
ONE JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
187(1)
256(2)
PD
1.5(1)
2.0(2)
Thermal Resistance, Junction to Ambient
670(1)
RθJA
490(2)
BOTH JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
250(1)
385(2)
PD
2.0(1)
3.0(2)
Thermal Resistance, Junction to Ambient
493(1)
RθJA
325(2)
Thermal Resistance, Junction to Lead
188(1)
RθJL 208(2)
Junction Temperature & Storage Temperature
Note:
1. FR-4 @ minimum pad
2. FR-4 @ 1.0 x 1.0 inch pad
TJ,TSTG
-55~150
UNIT
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
18-Dec-2009 Rev. A
Page 1 of 28









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SMUN5334DW Даташит, Описание, Даташиты
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL MIN. TYP. MAX.
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Voltage
Collector-Emitter Cutoff Current
SMUN5311DW
V(BR)CBO
V(BR)CEO
ICBO
ICEO
50
50
-
-
-
--
--
- 100
- 500
- 0.5
SMUN5312DW
- - 0.2
SMUN5313DW
- - 0.1
SMUN5314DW
- - 0.2
SMUN5315DW
- - 0.9
Emitter-Base
Cutoff Current
SMUN5316DW
SMUN5330DW
IEBO
-
-
- 1.9
- 4.3
SMUN5331DW
- - 2.3
SMUN5332DW
- - 1.5
SMUN5333DW
- - 0.18
SMUN5334DW
- - 0.13
SMUN5335DW
- - 0.2
ON CHARACTERISTICS 3
SMUN5311DW
- - 0.25
SMUN5312DW
- - 0.25
SMUN5313DW
- - 0.25
SMUN5314DW
- - 0.25
SMUN5335DW
- - 0.25
Collector-Emitter
Saturation Voltage
SMUN5330DW
SMUN5331DW
VCE(sat)
-
-
- 0.25
- 0.25
SMUN5315DW
- - 0.25
SMUN5316DW
- - 0.25
SMUN5332DW
- - 0.25
SMUN5333DW
- - 0.25
SMUN5334DW
- - 0.25
SMUN5311DW
35 60
-
SMUN5312DW
60 100
-
SMUN5313DW
80 140
-
SMUN5314DW
80 140
-
SMUN5315DW
160 350
-
DC Current Gain
SMUN5316DW
SMUN5330DW
hFE
160 350
3.0 5.0
-
-
SMUN5331DW
8.0 15
-
SMUN5332DW
15 30
-
SMUN5333DW
80 200
-
SMUN5334DW
80 150
-
SMUN5335DW
Note:
3. Pulse test: pulse width <300 µS, duty cycle<2.0%
80
140
-
UNIT
TEST CONDITION
V IC=10µA, IE=0
V IC =2mA, IB = 0
nA VCB=50V, IE=0
nA VCE=50V, IB=0
mA VEB=6V, IC=0
IC=10mA, IB=0.3mA
Vdc IC=10mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=5mA
18-Dec-2009 Rev. A
Page 2 of 28









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SMUN5334DW Даташит, Описание, Даташиты
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)(Continued)
PARAMETER
SYMBOL MIN. TYP. MAX.
ON CHARACTERISTICS 3
SMUN5311DW
- - 0.2
SMUN5312DW
- - 0.2
SMUN5314DW
- - 0.2
SMUN5315DW
- - 0.2
SMUN5316DW
- - 0.2
Output Voltage(On)
SMUN5330DW
SMUN5331DW
VOL
-
-
- 0.2
- 0.2
SMUN5332DW
- - 0.2
SMUN5333DW
- - 0.2
SMUN5334DW
- - 0.2
SMUN5335DW
- - 0.2
SMUN5313DW
- - 0.2
SMUN5311DW
4.9 -
-
SMUN5312DW
4.9 -
-
SMUN5313DW
4.9 -
-
SMUN5314DW
4.9 -
-
SMUN5333DW
4.9 -
-
Output Voltage(Off)
SMUN5334DW
SMUN5335DW
VOH
4.9
4.9
-
-
-
-
SMUN5330DW
4.9 -
-
SMUN5315DW
4.9 -
-
SMUN5316DW
4.9 -
-
SMUN5331DW
4.9 -
-
SMUN5332DW
4.9 -
-
SMUN5311DW
7.0 10 13
SMUN5312DW
15.4 22 28.6
SMUN5313DW
32.9 47 61.1
SMUN5314DW
7.0 10 13
SMUN5315DW
7.0 10 13
Input Resistor
SMUN5316DW
SMUN5330DW
R1
3.3 4.7 6.1
0.7 1.0 1.3
SMUN5331DW
1.5 2.2 2.9
SMUN5332DW
3.3 4.7 6.1
SMUN5333DW
3.3 4.7 6.1
SMUN5334DW
15.4 22 28.6
SMUN5335DW
1.54 2.2 2.86
SMUN5311DW
0.8 1.0 1.2
SMUN5312DW
0.8 1.0 1.2
SMUN5313DW
0.8 1.0 1.2
SMUN5314DW
0.17
0.21
0.25
SMUN5315DW
---
Resistor Ratio
SMUN5316DW
---
R1/R2
SMUN5330DW
0.8 1.0 1.2
SMUN5331DW
0.8 1.0 1.2
SMUN5332DW
0.8 1.0 1.2
SMUN5333DW
0.055 0.1 0.185
SMUN5334DW
0.38
0.47
0.56
SMUN5335DW
Note:
3. Pulse test: pulse width <300 µS, duty cycle<2.0%
0.038
0.047
0.056
UNIT
TEST CONDITION
Vdc VCC=5V, VB=2.5V, RL=1 K
VCC=5V, VB=3.5V, RL=1 K
VCC=5V, VB=0.5V, RL=1 K
Vdc
VCC=5V, VB=0.05V, RL=1 K
VCC=5V, VB=0.25V, RL=1 K
K
18-Dec-2009 Rev. A
Page 3 of 28










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