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BC856B PDF даташит

Спецификация BC856B изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв BC856B
Описание General Purpose Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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BC856B Даташит, Описание, Даташиты
BC856B, BC857B, BC858A
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858
VCEO
−65
−45
−30
V
Collector-Base Voltage
BC856
BC857
BC858
VCBO
−80
−50
−30
V
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
−5.0
−100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
150 mW
883 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX M G
G
1
XX = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 4
1
Publication Order Number:
BC856BWT1/D









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BC856B Даташит, Описание, Даташиты
BC856B, BC857B, BC858A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856
BC857
BC858
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856
BC857
BC858
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856
BC857
BC858
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856
BC857
BC858
V(BR)EBO
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856A, BC585A
BC856B, BC857B, BC858B
BC857C
hFE
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, BC858A
BC856B, BC857B, BC858B
BC857C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
125
220
420
−0.6
100
Typ Max Unit
− −V
−−
−−
− −V
−−
−−
− −V
−−
−−
− −V
−−
−−
− −15 nA
− −4.0 mA
90 −
150 −
270 −
180 250
290 475
520 800
− −0.3
− −0.65
−0.7 −
−0.9 −
− −0.75
− −0.82
V
V
V
− − MHz
− 4.5 pF
− 10 dB
www.onsemi.com
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BC856B Даташит, Описание, Даташиты
BC856B, BC857B, BC858A
BC857/BC858
2.0
1.5 VCE = -10 V
TA = 25°C
1.0
0.7
0.5
0.3
0.2
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
-1.0
-0.9 TA = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.7
-0.6 VBE(on) @ VCE = -10 V
-0.5
-0.4
-0.3
-0.2
-0.1 VCE(sat) @ IC/IB = 10
0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
-50 -100
Figure 2. “Saturation” and “On” Voltages
-2.0
TA = 25°C
-1.6
-1.2
-0.8
IC =
-10 mA
-0.4
IC = -50 mA
IC = -20 mA
IC = -200 mA
IC = -100 mA
0
-0.02
-0.1 -1.0
IB, BASE CURRENT (mA)
-10 -20
Figure 3. Collector Saturation Region
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-0.2 -1.0
-10
IC, COLLECTOR CURRENT (mA)
-100
Figure 4. Base−Emitter Temperature Coefficient
10
Cib
7.0
TA = 25°C
5.0
3.0 Cob
2.0
1.0
-0.4 -0.6
-1.0 -2.0 -4.0 -6.0 -10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
-20 -30 -40
400
300
200
150 VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0 -2.0 -3.0 -5.0
-10 -20 -30 -50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current−Gain − Bandwidth Product
www.onsemi.com
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