DataSheet26.com

FDPF7N60NZ PDF даташит

Спецификация FDPF7N60NZ изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв FDPF7N60NZ
Описание N-Channel MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

10 Pages
scroll

No Preview Available !

FDPF7N60NZ Даташит, Описание, Даташиты
March 2013
FDP7N60NZ / FDPF7N60NZ
N-Channel UniFETTM II MOSFET
600 V, 6.5 A, 1.25
Features
• RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 7 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
G
D
S
TO-220
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N60NZ FDPF7N60NZ
600
±30
6.5 6.5*
3.9 3.9*
26 26*
275
6.5
14.7
10
147 33
1.2 0.26
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C0
1
FDP7N60NZ
0.85
0.5
62.5
FDPF7N60NZ
3.8
-
62.5
Unit
oC/W
www.fairchildsemi.com









No Preview Available !

FDPF7N60NZ Даташит, Описание, Даташиты
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP7N60NZ
Device
FDP7N60NZ
Package
TO-220
Reel Size
-
Tape Width
-
FDPF7N60NZ
FDPF7N60NZ
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125oC
VGS = ±25V, VDS = 0V
600
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 3.25A
VDS = 20V, ID = 3.25A
3
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 6.5A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, ID = 6.5A
RG = 25
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 6.5A
dIF/dt = 100A/s
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.05
7.3
550
70
7
13
3
5.6
17.5
30
40
25
-
-
-
250
1.4
Max. Unit
-V
- V/oC
1
A
10
±10 A
5V
1.25
-S
730 pF
90 pF
10 pF
17 nC
- nC
- nC
45 ns
70 ns
90 ns
60 ns
6.5 A
26 A
1.4 V
- ns
- C
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =13mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 6.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C0
2
www.fairchildsemi.com









No Preview Available !

FDPF7N60NZ Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 15.0 V
10 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1
0.1
0.1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
VGS = 10V
1.2 VGS = 20V
1.0
0.8
0
* Note : TJ = 25oC
2 4 6 8 10 12 14
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
1000
Ciss
Coss
100
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
10 Crss = Cgd
Crss
* Note:
1. VGS = 0V
2. f = 1MHz
1
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
100
10
1
0.1
4
150oC
25oC
-55oC
* Notes :
1. VDS = 20V
2. 250s Pulse Test
567
VGS, Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10
25oC
Notes:
1. VGS = 0V
2. 250s Pulse Test
1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
* Note : ID = 6.5A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge [nC]
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C0
3
www.fairchildsemi.com










Скачать PDF:

[ FDPF7N60NZ.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
FDPF7N60NZN-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск