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SDD01N70 PDF даташит

Спецификация SDD01N70 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDD01N70
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDD01N70 Даташит, Описание, Даташиты
Green SDU/D01N70
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
700V 1A 16 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU01N70HZ
TO-252
SDD01N70HS
TO-251S
SDD01N70HL
TO-251L
Marking Code
SDU01N70
SDD01N70
SDD01N70
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
IDM -Pulsed a
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
700
±30
1
0.8
3
4.9
42
27
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
3 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
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SDD01N70 Даташит, Описание, Даташиты
SDU/D01N70
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=560V , VGS=0V
VGS= ±30V , VDS=0V
700
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=0.5A
VDS=20V , ID=0.5A
3
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=350V
ID=0.5A
VGS=10V
RGEN=6 ohm
VDS=350V,ID=0.5A,VGS=10V
VDS=350V,ID=0.5A,
VGS=10V
Typ
3.9
12.9
0.65
144
22
6
14
15
18
17
3.5
1
1.5
Max Units
1
±100
V
uA
nA
5V
16 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure13)
0.87 1.4
V
Dec,24,2013
2 www.samhop.com.tw









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SDD01N70 Даташит, Описание, Даташиты
SDU/D01N70
1.0
0.8
VGS = 10V
VGS = 6V
0.6
0.4
0.2 VGS = 5V
0
0 4 8 12 16 20
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
24.0
20.0
16.0
12.0
V G S =10V
8.0
4.0
0
0.1 0.2 0.4 0.6 0.8 1.0
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
V DS =V G S
1.4 ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.1
0.60
0.48
0.36
Tj=125 C
-55 C
0.24
25 C
0.12
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2 V G S =10V
ID= 0.5A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
SDD01N70N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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