DataSheet26.com

T25 PDF даташит

Спецификация T25 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «TRIACs».

Детали детали

Номер произв T25
Описание TRIACs
Производители STMicroelectronics
логотип STMicroelectronics логотип 

12 Pages
scroll

No Preview Available !

T25 Даташит, Описание, Даташиты
BTA24, BTB24, BTA25
BTA26, BTB26, T25
25 A standard and Snubberless™ triacs
Features
High current triac
Low thermal resistance with clip bonding
High commutation (4 quadrant) or very high
commutation (3 quadrant) capability
BTA series UL1557 certified (File ref: 81734)
Packages are RoHS (2002/95/EC) compliant
Applications
Applications include the ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits, etc.,
or for phase control operation in light dimmers,
motor speed controllers, and silmilar.
The snubberless versions (BTA/BTB...W and T25
series) are especially recommended for use on
inductive loads, due to their high commutation
performances. The BTA series provides an
insulated tab (rated at 2500 VRMS).
A2
G
A1
A2
A1
A2
G
TO-220AB Insulated
(BTA24)
A1
G A2
A1
A2
G
TO-220AB
(BTB24)
RD91
(BTA25)
A2
A1
A2
G
TOP3 Insulated
(BTA26)
A2
Description
Available either in through-hole or surface-mount
packages, the BTA24, BTB24, BTA25, BTA26,
BTB26 and T25 triac series is suitable for general
purpose mains power AC switching.
A1 A2
G
D2PAK
(T25)
A1
A2
G
TOP3
(BTB26)
Table 1. Device summary
Symbol
Parameter
BTA24(1) BTB24 BTA25(1) BTA26(1) BTB26 T25
Unit
IT(RMS)
RMS on-state
current
VDRM/VRRM
Repetitive peak
off-state voltage
IGT (Snubberless)
Triggering gate
current
IGT (Standard)
Triggering gate
current
25 25 25
25 25 25 A
600 / 800 600 / 800 600 / 800 600(2) / 800 600 600 / 800 V
35 / 50 35 / 50
50
35 / 50
-
35 mA
- 50 50 50 50 - mA
1. Insulated packages
2. 600 V version available only with IGT = 50 mA (Snubberless and Standard)
TM: Snubberless is a trademark of STMicroelectronics
July 2007
Rev 10
1/12
www.st.com
12









No Preview Available !

T25 Даташит, Описание, Даташиты
Characteristics
1 Characteristics
BTA24, BTB24, BTA25, BTA26, BTB26, T25
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS)
RMS on-state current (full sine wave)
TOP3
D2PAK /
TO-220AB
RD91 Ins/
TOP3 Ins.
TO-220AB Ins.
ITSM
I²t
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tc = 105° C
Tc = 100° C
Tc = 100° C
Tc = 75° C
t = 20 ms
t = 16.7 ms
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Value
25
250
260
340
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 3.
Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless and
logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
Quadrant
T25
T2535
BTA/BTB
CW BW
Unit
IGT(1)
VGT
VGD
IH(2)
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125° C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt (2) VD = 67 %VDRM gate open
(dI/dt)c (2) Without snubber
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
I - II - III
I - II - III
MAX.
MAX.
35
I - II - III MIN.
I - III
II
Tj = 125° C
Tj = 125° C
MAX.
MAX.
MIN.
MIN.
50
70
80
500
13
35 50 mA
1.3 V
0.2 V
50 75 mA
70 80
mA
80 100
500 1000 V/µs
13 22 A/ms
2/12









No Preview Available !

T25 Даташит, Описание, Даташиты
BTA24, BTB24, BTA25, BTA26, BTB26, T25
Characteristics
Table 4.
Symbol
Electrical characteristics (Tj = 25° C, unless otherwise specified),
standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B
Test Conditions
Quadrant
Value
IGT (1)
VGT
VGD
IH(2))
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ Tj = 125° C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt(2) VD = 67 %VDRM gate open
(dV/dt)c (2) (dI/dt)c = 13.3 A/ms
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
I - II - III
IV
ALL
ALL
I - III - IV
II
Tj = 125° C
Tj = 125° C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
50
100
1.3
0.2
80
70
160
500
10
Table 5. Static characteristics
Symbol
Test Conditions
VTM (1)
Vt0 (1)
Rd (1)
ITM = 35 A tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
1. for both polarities of A2 referenced to A1.
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
16
5
3
Unit
mA
V
V
mA
mA
V/µs
V/µs
Unit
V
V
mΩ
µA
mA
Table 6. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case (AC)
Rth(j-a)
Junction to ambient
(1)S = 1 cm²
TOP 3
D2PAK / TO-220AB
RD91 Insulated / TOP3 Insulated
TO-220AB Insulated
D2PAK
TOP3 / TOP3 Insulated
TO-220AB / TO-220AB Insulated
1. S = Copper surface under tab.
Value Unit
0.6
0.8
° C/W
0.9
1.7
45
50 ° C/W
60
3/12










Скачать PDF:

[ T25.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
T20Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
T20-250TIRISTORIM&G Electronic
M&G Electronic
T200QFE-V44-FStandard LCD ModuleKitronix
Kitronix
T200XW01WXGA Color TFT-LCD ModuleAUO
AUO

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск