C2M0040120D PDF даташит
Спецификация C2M0040120D изготовлена «Cree» и имеет функцию, называемую «Silicon Carbide Power MOSFET». |
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Детали детали
Номер произв | C2M0040120D |
Описание | Silicon Carbide Power MOSFET |
Производители | Cree |
логотип |
10 Pages
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VDS 1200 V
C2M0040120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
60 A
RDS(on) 40 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Battery Chargers
• Motor Drives
• Pulsed Power Applications
Part Number
C2M0040120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
1200
-10/+25
-5/+20
60
40
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
VGS = 20 V, TC = 25˚C
A
VGS = 20 V, TC = 100˚C
160 A Pulse width tP limited by Tjmax
330
-55 to
+150
260
1
8.8
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 22
Fig. 20
1 C2M0040120D Rev. B, 10-2015
No Preview Available ! |
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
1200
2.0
2.6
2.1
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
1
40
84
15.1
13.2
Ciss Input Capacitance
1893
Max.
4
100
250
52
Coss Output Capacitance
150
Crss Reverse Transfer Capacitance
10
Eoss Coss Stored Energy
82
EAS Avalanche Energy, Single Pluse
2
EON Turn-On Switching Energy
1.0
EOFF Turn Off Switching Energy
0.4
td(on) Turn-On Delay Time
15
tr Rise Time
52
td(off)
Turn-Off Delay Time
26
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
34
1.8
28
37
115
Unit
V
V
V
μA
nA
mΩ
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS , ID = 10mA
VDS = VGS , ID = 10mA,TJ = 150 °C
VDS = 1200 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 40 A
VGS = 20 V, ID = 40 A, TJ = 150 °C
VDS= 20 V, IDS= 40 A
VDS= 20 V, IDS= 40 A, TJ = 150 °C
VGS = 0 V
pF VDS = 1000 V
f = 1 MHz
μJ VAC = 25 mV
J ID = 40A, VDD = 50V
mJ VDS = 800 V, VGS = -5/20 V
ID = 40A, RG(ext) = 2.5Ω, L= 80 μH
VDD = 800 V, VGS = -5/20 V
ID = 40 A
ns RG(ext) = 2.5 Ω, RL = 20 Ω
Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω f = 1 MHz, VAC = 25 mV
VDS = 800 V, VGS = -5/20 V
nC ID = 40 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics
Symbol Parameter
Typ. Max.
VSD Diode Forward Voltage
3.3
3.1
IS Continuous Diode Forward Current
60
trr Reverse Recovery Time
54
Qrr Reverse Recovery Charge
283
Irrm Peak Reverse Recovery Current
15
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Unit
V
V
A
ns
nC
A
Test Conditions
VGS = - 5 V, ISD = 20 A, TJ = 25 °C
VGS = - 5 V, ISD = 20 A, TJ = 150 °C
TC= 25 °C
VGS = - 5 V, ISD = 40 A TJ = 25 °C
VR = 800 V
dif/dt = 1000 A/µs
Symbol
RθJC
RθJC
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Typ.
0.34
Max.
0.38
40
Unit
°C/W
Test Conditions
Note
Fig. 11
Fig. 4,5,6
Fig. 7
Fig. 17,18
Fig 16
Fig. 29
Fig. 25
Fig. 27
Fig. 12
Note
Fig. 8, 9,
10
Note 1
Note 1
Note
Fig. 21
2 C2M0040120D Rev. B, 10-2015
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Typical Performance
100
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 20 V
80
VGS = 18 V
VGS = 16 V
60
VGS = 14 V
40
VGS = 12 V
20
VGS = 10 V
0
0.0
2.5 5.0 7.5
Drain-Source Voltage, VDS (V)
10.0
Figure 1. Output Characteristics TJ = -55 °C
100
Conditions:
TJ = 150 °C
tp < 200 µs
80
60
VGS = 20 V
VGS = 16 V
VGS = 18 V
VGS = 14 V
VGS = 12 V
VGS = 10 V
40
20
0
0.0
2.5 5.0 7.5
Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 °C
140
Conditions:
120
VGS = 20 V
tp < 200 µs
100
TJ = 150 °C
80
60
TJ = 25 °C
40 TJ = -55 °C
20
0
0 20 40 60 80
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
10.0
100
3 C2M0040120D Rev. B, 10-2015
100
Conditions:
TJ = 25 °C
tp < 200 µs
80
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
60
VGS = 12 V
40
VGS = 10 V
20
0
0.0
2.5 5.0 7.5
Drain-Source Voltage, VDS (V)
10.0
Figure 2. Output Characteristics TJ = 25 °C
2.0
Conditions:
1.8 IDS = 40 A
VGS = 20 V
1.6 tp < 200 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0 25 50 75 100
Junction Temperature, TJ (°C)
125
150
Figure 4. Normalized On-Resistance vs. Temperature
140
Conditions:
IDS = 40 A
120 tp < 200 µs
100
80 VGS = 14 V
VGS = 16 V
60 VGS = 18 V
40 VGS = 20 V
20
0
-50
-25
0 25 50 75 100
Junction Temperature, TJ (°C)
125
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150
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Номер в каталоге | Описание | Производители |
C2M0040120D | Silicon Carbide Power MOSFET | Cree |
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