ACE2320M PDF даташит
Спецификация ACE2320M изготовлена «ACE Technology» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | ACE2320M |
Описание | N-Channel MOSFET |
Производители | ACE Technology |
логотип |
7 Pages
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ACE2320M
N-Channel 20-V MOSFET
Description
ACE2320M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOT-23 saves board space
• Fast switching speed
• High performance trench technology
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±8 V
7.0
ID
A
5.5
IDM 20 A
IS 1.9 A
1.3
PD
W
0.8
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
100
166
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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Packaging Type
SOT-23-3
ACE2320M
N-Channel 20-V MOSFET
Ordering information
ACE2320M BM + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.1 2
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Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
ID(on)
Drain-Source On-ResistanceA
Forward TransconductanceA
Diode Forward Voltage
RDS(ON)
gFS
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
ACE2320M
N-Channel 20-V MOSFET
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
VDS = 16V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 4.5V, ID = 5.6 A
VGS = 2.5 V, ID = 4.5 A
VDS =15 V, ID = 5.6 A
IS = 1 A, VGS = 0 V
Dynamic b
VDS = 10V, VGS = 4.5 V, ID = 5.6 A
VDS = 10 V, RL = 1.8 Ω, ID = 5.6 A,
VGEN = 4.5 V, RGEN = 6Ω,
VDS = 15 V, VGS = 0 V, f =1 MHz
Min Typ Max Unit
1V
±10 nA
1
uA
25
10 A
18
mΩ
21
12 S
0.69 V
11
1.9
3.8
367
1337
4697
3037
628
105
99
nC
ns
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.1 3
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Номер в каталоге | Описание | Производители |
ACE2320M | N-Channel MOSFET | ACE Technology |
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