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Спецификация DMC25D1UVT изготовлена «Diodes» и имеет функцию, называемую «COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | DMC25D1UVT |
Описание | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Производители | Diodes |
логотип |
9 Pages
No Preview Available ! |
DMC25D1UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
25V
-12V
RDS(ON)
4Ω @ VGS = 4.5V
55mΩ @ VGS= -4.5V
70mΩ @ VGS= -2.5V
ID
TA = +25°C
0.5A
-3.9A
-3.5A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Load Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
TSOT26
Vin, R1 4
Q2
3 Vout, C1
D1
D2
ON/OFF 5
2
Q1
Vout, C1
G1
G2
Top View
R1, C1 6
1 R2
Top View
Internal circuit
Gate Protection
Diode
S1
Q1 N-Channel MOSFET
Gate Protection
Diode
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC25D1UVT-7
DMC25D1UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G2
D1
G1
CC65DD
S2
S1 D2 D2
C6D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
1 of 9
www.diodes.com
April 2015
© Diodes Incorporated
No Preview Available ! |
Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
IS
IDM
Maximum Ratings – Q2 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Steady State
Note 9
Symbol
VDSS
VGSS
ID
IS
IDM
DMC25D1UVT
Value
25
-0.5
+8
0.5
1.2
1.5
Unit
V
V
A
A
A
Value
-12
±8
-3.9
-17.4
-2.82
-40
-40
Unit
V
V
A
A
A
A
A
Thermal Characteristics
Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
Note 9
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.3
100
5
36
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
25
—
—
0.65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
0.85
3.8
0.76
27.6
8.5
3.3
25
0.4
0.9
0.1
0.04
2.5
1.4
5.7
4.3
Max
—
1
100
1.5
4
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 20V, VGS = 0V
nA VGS = 8V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 4.5V, ID = 0.4A
V VGS = 0V, IS = 0.29A
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 5V, ID = 0.2A
ns
VGS = 4.5V, VDS = 6V,
RG = 50Ω, ID = 0.5A
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
2 of 9
www.diodes.com
April 2015
© Diodes Incorporated
No Preview Available ! |
Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
-12
—
—
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
-0.35
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to production testing.
Typ
—
—
—
—
—
—
—
—
9.7
393
1.9
1846
24.5
3.3
7.3
1.2
2.7
9.8
6.5
Max
—
-1
±10
-1.5
55
70
100
-1.2
—
—
—
—
—
—
—
—
—
—
—
DMC25D1UVT
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -6.4V, VGS = 0V
µA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
mΩ VGS = -2.5V, ID = -2.5A
VGS = -1.8V, ID = -2.0A
V VGS = 0V, IS = -0.6A
pF VDS = -6V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = -6V, ID = -2.8A
µs
VGS = -4.5V, VDS = -6V,
RG = 6Ω, ID = -2.8A
Typical Characteristics - N-CHANNEL
1.5
VGS=4.5V
VGS=2.5V
1.2 VGS=4.0V
VGS=3.0V
0.9
VGS=3.5V
VGS=2.0V
0.6
0.3
0.0
0
VGS=1.5V
VGS=1.2V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
1
VDS= 5V
0.8
0.6
-55℃
25℃
85℃
125℃
150℃
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
3 of 9
www.diodes.com
April 2015
© Diodes Incorporated
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