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Спецификация DMC25D0UVT изготовлена «Diodes» и имеет функцию, называемую «COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | DMC25D0UVT |
Описание | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Производители | Diodes |
логотип |
11 Pages
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DMC25D0UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
25V
-30V
RDS(ON)
4Ω @ VGS = 4.5V
80mΩ @ VGS= -12V
125mΩ @ VGS= -4.5V
ID
TA = +25°C
0.4 A
-3.2 A
-2.6 A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Load Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate on N-Channel (>6kV Human Body Model)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
D1 D2
TSOT26
G1 G2
Top View
Top View
Internal Circuit
Gate Protection
Diode
S1
Q1 N-Channel MOSFET
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC25D0UVT-7
DMC25D0UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
2015
C
Month
Code
Jan Feb
12
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
C5D
C5D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y= Year (ex: C = 2015)
M = Month (ex: 9 = September)
2016
D
Mar
3
2017
E
2018
F
Apr May Jun
456
Jul
7
1 of 11
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
April 2015
© Diodes Incorporated
No Preview Available ! |
DMC25D0UVT
Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Maximum Ratings – Q2 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Steady State
Note 9
Symbol
VDSS
VGSS
ID
IS
IDM
Symbol
VDSS
VGSS
ID
IS
IDM
Value
25
-0.5
+8
0.4
1.2
1.5
Value
-30
±12
-3.2
-14.4
-2.6
-1.2
-20
Unit
V
V
A
A
A
Unit
V
V
A
A
A
A
A
Thermal Characteristics
Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
Note 9
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
101
5
37
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
25
—
—
0.65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
0.85
3.8
0.76
26.2
7.1
2.7
84.5
0.4
0.7
0.1
0.1
3
2.3
7.7
3.7
Max
—
1
100
1.5
4
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 20V, VGS = 0V
nA VGS = 8V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 4.5V, ID = 0.4A
V VGS = 0V, IS = 0.29A
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 5V, ID = 0.2A
ns
VGS = 4.5V, VDS = 6V,
RG = 50Ω, ID = 0.5A
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
2 of 11
www.diodes.com
April 2015
© Diodes Incorporated
No Preview Available ! |
Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
-30
—
—
-0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to production testing.
Typ
—
—
—
-0.9
59
75
—
-0.7
854
53
47
11
10
21
1.5
2.8
3.5
3.3
61.4
14.6
Max
—
-1
±100
-1.5
80
125
300
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
DMC25D0UVT
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -24V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -12V, ID = -2.3A
mΩ VGS = -4.5V, ID = -1.9A
VGS = -2.5V, ID = -1A
V VGS = 0V, IS = -1A
pF VDS = -15V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = -15V, ID = -4A
ns
VGS = -10V, VDS = -15V,
RG = 6Ω, ID = -1A
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
3 of 11
www.diodes.com
April 2015
© Diodes Incorporated
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