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MS13N30 PDF даташит

Спецификация MS13N30 изготовлена ​​​​«Bruckewell» и имеет функцию, называемую «N-Channel 30-V (D-S) MOSFET».

Детали детали

Номер произв MS13N30
Описание N-Channel 30-V (D-S) MOSFET
Производители Bruckewell
логотип Bruckewell логотип 

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MS13N30 Даташит, Описание, Даташиты
MS13N30
N-Channel 30-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize High
Cell Density process. Low rDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are lower voltage application, power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones
Features
Low rDS(on) trench technology
Fast switching speed
Low thermal impedance
RoHS compliant package
Applications:
Power Routing
Li Ion Battery Packs
Level Shifting and Driver Circuits
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS13N30]
© Bruckewell Technology Corporation Rev. A -2014









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MS13N30 Даташит, Описание, Даташиты
MS13N30
N-Channel 30-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Currenta (TA=25°C)
Continuous Drain Currenta (TA =70°C)
IDM Pulsed Drain Currentb
IS Continuous Source Current (Diode Conduction)a
Power Dissipationa (TA =25°C)
PD Power Dissipationa (TA =70°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value
30
±20
2.0
1.6
10
0.45
0.34
0.22
-55 to +150
Unit
V
V
A
A
A
A
W
W
°C
Thermal Resistance Ratings
Symbol
Parameter
RTHJA
Maximum Junction-to-Ambient C/Wa (t <= 10 sec)
Maximum Junction-to-Ambient C/Wa (Steady-State)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum
375
430
Units
°C/W
Static
Symbol
VGS
Parameter
Gate Threshold Voltage
Test Conditions
VDS = VGS, ID =-250μA
Min Typ. Max. Units
1V
IGSS Gate-Body Leakage
VDS = 0 V , VGS = ±20 V
±100 nA
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain CurrentA
VDS = 24 V , VGS = 0 V
VDS = 24 V , VGS = 0 V , TJ= 55°C
VDS = 5 V, VGS = 10 V
3
1 uA
10
A
RDS(on)
gfs
Drain-Source On-ResistanceA
Forward TranconductanceA
VGS = 10 V, ID = 1.6 A
VGS = 4.5 V , ID = 1.3 A
VDS = 15 V , ID = 1.6 A
58 mΩ
82
4S
VSD Diode Forward Voltage
IS = 0.25 V , VGS = 0 V
0.74 V
Dynamicb
Symbol Parameter
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Test Conditions
VDS = 15 V , RL = 9.4 Ω,
VGEN = 10 V , RGEN = 6 Ω
ID = 1.6 A
Min Typ. Max. Units
-- 4 -- ns
-- 7 -- ns
-- 19 -- ns
-- 5 -- ns
Publication Order Number: [MS13N30]
© Bruckewell Technology Corporation Rev. A -2014









No Preview Available !

MS13N30 Даташит, Описание, Даташиты
MS13N30
N-Channel 30-V (D-S) MOSFET
Dynamicb
Symbol Parameter
Test Conditions
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 15 V , ID = 1.6 A
VGS = 4.5 V
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0 V ,
VDS = 15 V , f = 1MHz
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ. Max. Units
-- 5.9 -- nC
-- 2.1 -- nC
-- 2.1 -- nC
-- 513 -- pF
-- 69 -- pF
-- 54 -- pF
Publication Order Number: [MS13N30]
© Bruckewell Technology Corporation Rev. A -2014










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