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IRFS3006PbF PDF даташит

Спецификация IRFS3006PbF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRFS3006PbF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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IRFS3006PbF Даташит, Описание, Даташиты
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96188
IRFS3006PbF
IRFSL3006PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.0m:
2.5m:
c270A
S ID (Package Limited) 195A
DD
S
G
D2Pak
IRFS3006PbF
S
D
G
TO-262
IRFSL3006PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
klJunction-to-Case
jkJunction-to-Ambient
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Max.
™270
™191
195
1080
375
2.5
± 20
10
-55 to + 175
300
x x10lb in (1.1N m)
320
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
10/06/08









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IRFS3006PbF Даташит, Описание, Даташиты
IRFS/SL3006PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
60
–––
–––
2.0
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
RG Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
280
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
2.0
–––
–––
–––
–––
–––
2.0
Typ.
–––
200
37
60
140
16
182
118
189
8970
1020
534
1480
1920
Max. Units
Conditions
–––
–––
2.5
4.0
20
250
100
-100
–––
V VGS = 0V, ID = 250µA
dV/°C Reference to 25°C, ID = 5mA
gmVGS = 10V, ID = 170A
V VDS = VGS, ID = 250µA
µA VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Max. Units
Conditions
––– S VDS = 25V, ID = 170A
300 nC ID = 170A
g––– VDS =30V
VGS = 10V
––– ID = 170A, VDS =0V, VGS = 10V
––– ns VDD = 39V
––– ID = 170A
g––– RG = 2.7
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz, See Fig. 5
i––– VGS = 0V, VDS = 0V to 48V , See Fig. 11
h––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 270 A MOSFET symbol
showing the
––– ––– 1080 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 170A, VGS = 0V
––– 44 ––– ns TJ = 25°C
VR = 51V,
––– 48 –––
TJ = 125°C
––– 63 ––– nC TJ = 25°C
gIF = 170A
di/dt = 100A/µs
––– 77 –––
TJ = 125°C
––– 2.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 170A, di/dt 1360A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.022mH
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25, IAS = 170A, VGS =10V. Part not recommended for use
above this value .
2
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
Š RθJC value shown is at time zero
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IRFS3006PbF Даташит, Описание, Даташиты
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
10
1
0.1
3.5V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
TJ = 25°C
10
1
2.0
VDS = 25V
60µs PULSE WIDTH
3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
16000
12000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
4000
Coss
Crss
0
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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IRFS/SL3006PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
3.5V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 170A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 170A
VDS= 48V
12 VDS= 30V
8
4
0
0 40 80 120 160 200 240 280
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3










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Номер в каталогеОписаниеПроизводители
IRFS3006PbFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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