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IRFR8314PbF PDF даташит

Спецификация IRFR8314PbF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRFR8314PbF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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IRFR8314PbF Даташит, Описание, Даташиты
IRFR8314PbF
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
HEXFET® Power MOSFET
 
VDSS
30 V
D
RDS(on) max
(@ VGS = 10V)
2.2
m
G (@ VGS = 4.5V) 3.1
S
Qg (typical)
40 nC
ID (Silicon Limited)
ID (Package Limited)
179
90A
A
D
S
G
D-Pak
G
Gate
D
Drain
S
Source
Base part number Package Type
IRFR8314PbF
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Absolute Maximum Rating
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Orderable Part Number
IRFR8314TRPbF
Max.
30
± 20
179
127
90
357
125
63
0.83
-55 to + 175  
300
Units
V
A
 
 
 
W
W
W/°C
°C  
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
°C/W  
Notes through are on page 9
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IRFR8314PbF Даташит, Описание, Даташиты
  IRFR8314PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
189
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
18
1.6
2.6
1.7
-7.0
–––
–––
–––
–––
–––
36
10
7.7
10
8.3
20
2.0
19
98
28
30
4945
908
493
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
2.2 m VGS = 10V, ID = 90A
3.1 VGS = 4.5V, ID = 72A
2.2 V VDS = VGS, ID = 100µA
––– mV/°C
1.0
150
100
-100
–––
54
–––
–––
–––
–––
–––
–––
–––
–––
µA
VDS =24 V, VGS = 0V
VDS =24V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID =72A
 
  VDS = 15V
nC  VGS = 4.5V
  ID = 72A
 
 

VDD = 15V
ns ID = 72A
––– RG= 1.8
––– VGS = 4.5V
–––   VGS = 0V
––– pF   VDS = 15V
–––   ƒ = 1.0MHz
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IA Avalanche Current
180 mJ
279 
72  A
Diode Characteristics  
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– 179
––– 357
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– 1.0 V TJ = 25°C,IS = 72A,VGS = 0V
31 47 ns TJ = 25°C IF = 72A ,VDD=15V
87 130 nC di/dt = 360A/µs 
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IRFR8314PbF Даташит, Описание, Даташиты
 
1000
100
TOP
BOTTOM
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
1000
100
IRFR8314PbF
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
10 2.8V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
2.8V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 90A
VGS = 10V
1.5
1
0.1
1
VDS = 15V
60µs PULSE WIDTH
23456
VGS, Gate-to-Source Voltage (V)
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Fig 4. Normalized On-Resistance vs. Temperature
14
ID= 72A
12
10
VDS= 24V
VDS= 15V
8
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
6
4
2
0
0 20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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Номер в каталогеОписаниеПроизводители
IRFR8314PbFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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