IRFR7746PbF PDF даташит
Спецификация IRFR7746PbF изготовлена «International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
|
Детали детали
Номер произв | IRFR7746PbF |
Описание | Power MOSFET ( Transistor ) |
Производители | International Rectifier |
логотип |
12 Pages
No Preview Available ! |
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRFR7746PbF
IRFU7746PbF
HEXFET® Power MOSFET
D
VDSS
75V
RDS(on) typ.
9.5m
max
11.2m
ID (Silicon Limited)
59A
S
ID (Package Limited)
56A
D
S
G
D-Pak
IRFR7746PbF
GDS
I-Pak
IRFU7746PbF
G
Gate
D
Drain
S
Source
Base part number Package Type
IRFR7746PbF
IRFU7746PbF
D-Pak
I-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tube
75
Orderable Part Number
IRFR7746PbF
IRFR7746TRPbF
IRFU7746PbF
30
ID = 35A
25
20 TJ = 125°C
15
TJ = 25°C
10
5
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
60
Limited by package
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
November 7, 2014
No Preview Available ! |
IRFR/U7746PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Max.
59
42
56
230*
99
0.66
± 20
-55 to + 175
300
116
160
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.52
50
110
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
IGSS
RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
53
9.5
11.2
–––
–––
–––
–––
–––
1.6
Max.
–––
–––
11.2
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 35A
VGS = 6.0V, ID = 18A
V VDS = VGS, ID = 100µA
µA
VDS =75 V, VGS = 0V
VDS =75V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 190µH, RG = 50, IAS = 35A, VGS =10V.
ISD 35A, di/dt 570A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V
* Pulse drain current is limited at 224A by source bonding technology.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
November 7, 2014
No Preview Available ! |
IRFR/U7746PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
112
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
59
14
18
41
7.9
30
34
21
3107
257
159
234
299
Max. Units
Conditions
––– S VDS = 10V, ID =35A
89 ID = 35A
–––
–––
nC
VVDGSS
=
=
38V
10V
–––
––– VDD = 38V
–––
–––
ns
ID = 35A
RG= 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 25V
––– pF ƒ = 1.0MHz, See Fig.7
––– VGS = 0V, VDS = 0V to 60V
––– VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
59
230*
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.2 V TJ = 25°C,IS = 35A,VGS = 0V
––– 8.1 ––– V/ns TJ = 175°C,IS = 35A,VDS = 75V
–––
–––
27
32
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 64V
IF = 35A,
–––
–––
26
36
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs
––– 1.7 ––– A TJ = 25°C
3 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
November 7, 2014
Скачать PDF:
[ IRFR7746PbF.PDF Даташит ]
Номер в каталоге | Описание | Производители |
IRFR7746PbF | Power MOSFET ( Transistor ) | International Rectifier |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |