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IRFU7540PbF PDF даташит

Спецификация IRFU7540PbF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRFU7540PbF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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IRFU7540PbF Даташит, Описание, Даташиты
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRFR7540PbF
IRFU7540PbF
 
G
HEXFET® Power MOSFET
VDSS
60V
D
RDS(on) typ.
4.0m
max
4.8m
ID (Silicon Limited)
110A
S
ID (Package Limited)
90A
D
S
G
D-Pak
IRFR7540PbF
S
GD
I-Pak
IRFU7540PbF
G
Gate
D
Drain
S
Source
Base part number Package Type
IRFR7540PbF
IRFU7540PbF
D-Pak
I-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tube
75
Orderable Part Number
IRFR7540PbF
IRFR7540TRPbF
IRFR7540TRLPbF
IRFU7540PbF
20
ID = 66A
15
10
TJ = 125°C
5
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
125
Limited by Package
100
75
50
25
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
December 17, 2014









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IRFU7540PbF Даташит, Описание, Даташиты
  IRFR/U7540PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Max.
110
78
90
440*
140
0.95
± 20
-55 to + 175  
300
160
273
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A 
W
W/°C
V
°C  
mJ
A
mJ
Units
°C/W  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
48
4.0
5.2
–––
–––
–––
–––
–––
2.4
Max.
–––
–––
4.8
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 66A
VGS = 6.0V, ID = 33A
V VDS = VGS, ID = 100µA
µA
VDS = 60V, VGS = 0V
VDS = 60V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V

Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 90A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 72µH, RG = 50, IAS = 66A, VGS =10V.
 ISD 66A, di/dt 1190A/µs, VDD V(BR)DSS, TJ 175°C.
 Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 23A, VGS =10V.
* Pulse drain current is limited at 360A by source bonding technology.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
December 17, 2014









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IRFU7540PbF Даташит, Описание, Даташиты
  IRFR/U7540PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
86
22
27
59
8.7
38
59
32
4360
410
260
410
530
Max. Units
Conditions
––– S VDS = 10V, ID =66A
130 ID = 66A
–––
–––
nC
 VVDGSS
=
=
30V
10V
–––
––– VDD = 30V
–––
–––
ns
ID = 66A
RG= 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 25V
––– pF   ƒ = 1.0MHz, See Fig.7
––– VGS = 0V, VDS = 0V to 48V
––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics  
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
110
440*
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.2 V TJ = 25°C,IS = 66A,VGS = 0V 
––– 11 ––– V/ns TJ = 175°C,IS = 66A,VDS = 60V
–––
–––
34
37
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 66A,
–––
–––
36
47
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
 
––– 1.9 ––– A TJ = 25°C
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
December 17, 2014










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Номер в каталогеОписаниеПроизводители
IRFU7540PbFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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