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3135GN-280LV PDF даташит

Спецификация 3135GN-280LV изготовлена ​​​​«Microsemi» и имеет функцию, называемую «S-Band Radar».

Детали детали

Номер произв 3135GN-280LV
Описание S-Band Radar
Производители Microsemi
логотип Microsemi логотип 

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3135GN-280LV Даташит, Описание, Даташиты
3135GN-280LV
280 Watts • 50 Volts • 200 s, 20%
S-Band Radar 3100 - 3500 MHz
GENERAL DESCRIPTION
The 3135GN-280LV is an internally matched, COMMON SOURCE,
class AB, GaN on SiC HEMT transistor capable of providing over 13 dB
gain, 280 Watts of pulsed RF output power at 200 S pulse width, 20%
duty factor across the 3100 to 3500 MHz band. This hermetically sealed
transistor is utilizes gold metallization and eutectic attach to provide
highest reliability and superior ruggedness.
Market Application – High Power S-Band Pulsed Radar
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C
616 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
Gate-Source Voltage (VGS)
125 V
-8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG)
-55 to +125C
Operating Junction Temperature +250 C
CASE OUTLINE
55-KP
Common Source
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions1
Min Typ Max Units
Pout
Output Power
Pin=14.1W, Freq=3100,3300,3500 MHz 280 330
W
Gp Power Gain
Pin=14.1W, Freq=3100,3300,3500 MHz 13 13.7
dB
D Drain Efficiency
Dr Droop
Pin=14.1W, Freq=3100,3300,3500 MHz
Pin=14.1W, Freq=3100,3300,3500 MHz
50 58
0.2 0.5
%
dB
VSWR-T
Өjc
Load Mismatch Tolerance
Pin=14.1W, Freq=3100 MHz
3:1
Thermal Resistance
Pulse Width=200 S, Duty=20%
.39
1 Bias Condition: Vdd=+50V, Idq=100mA constant current (Vgs= -2.0 ~ -4.5V typical)
°C/W
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
Drain leakage current
VgS = -8V, VD = 50V
IG(Off)
BVDSS
Gate leakage current
Drain-Source breakdown
voltage
VgS = -8V, VD = 0V
Vgs =-8V, ID = 36mA
36 mA
6 mA
125 V
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information









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3135GN-280LV Даташит, Описание, Даташиты
Frequency
3100 MHz
3300 MHz
3500 MHz
3135GN-280LV
280 Watts • 50 Volts • 200 s, 20%
S-Band Radar 3100 - 3500 MHz
TYPICAL BROAD BAND PERFORMACE DATA
Pin Pout
Id
RL
ηD Gain
(W) (W) (A) (dB) (%) (dB)
14.1 324 2.49 -8.5 54 13.6
14.1 355 2.43 -8.5 60 14.0
14.1 316 2.20 -7.0 60 13.5
Droop
(dB)
0.2
0.2
0.2
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information









No Preview Available !

3135GN-280LV Даташит, Описание, Даташиты
3135GN-280LV
280 Watts • 50 Volts • 200 s, 20%
S-Band Radar 3100 - 3500 MHz
55-KP PACKAGE DIMENSION
Dimension
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min
(mil)
370
498
700
830
1030
101
151
385
130
003
135
105
085
065
Min
(mm)
9.40
12.65
17.78
21.08
26.16
2.56
3.84
9.78
3.30
.076
3.43
2.67
2.16
1.65
Max
(mil)
372
500
702
832
1032
102
152
387
132
004
137
107
86
66
Max
(mm)
9.44
12.7
17.83
21.13
26.21
2.59
3.86
9.83
3.35
0.10
3.48
2.72
2.18
1.68
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information










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Номер в каталогеОписаниеПроизводители
3135GN-280LVS-Band RadarMicrosemi
Microsemi

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