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Número de pieza | S-1002 | |
Descripción | VOLTAGE DETECTOR | |
Fabricantes | Seiko Instruments | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de S-1002 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! S-1002 Series
www.sii-ic.com
© Seiko Instruments Inc., 2014
VOLTAGE DETECTOR WITH SENSE PIN
Rev.1.1_00
The S-1002 Series is a high-accuracy voltage detector developed using CMOS technology. The detection voltage is fixed
internally with an accuracy of ±1.0% (−VDET(S) ≥ 2.2 V). It operates with current consumption of 500 nA typ.
Apart from the power supply pin, the detection voltage input pin (SENSE pin) is also prepared, so the output is stable even
if the SENSE pin falls to 0 V.
Two output forms Nch open-drain output and CMOS output are available.
Features
• Detection voltage:
1.0 V to 5.0 V (0.1 V step)
• Detection voltage accuracy:
±1.0% (2.2 V ≤ −VDET(S) ≤ 5.0 V)
±22 mV (1.0 V ≤ −VDET(S) < 2.2 V)
• Current consumption:
500 nA typ.
• Operation voltage range:
0.95 V to 10.0 V
• Hysteresis width:
5% ± 2%
• Output form:
Nch open-drain output (Active "L")
CMOS output (Active "L")
• Operation temperature range: Ta = −40°C to +85°C
• Lead-free (Sn 100%), halogen-free
Applications
• Power supply monitor for microcomputer and reset for CPU
• Constant voltage power supply monitor for TV, Blu-ray recorder and home appliance
• Power supply monitor for portable devices such as notebook PC, digital still camera and mobile phone
Packages
• SOT-23-5
• SC-82AB
Seiko Instruments Inc.
1
1 page Rev.1.1_00
VOLTAGE DETECTOR WITH SENSE PIN
S-1002 Series
4. 2 S-1002 Series NB type
Output form: Nch open-drain output (Active "L")
Detection Voltage
1.0 V ± 22 mV
1.1 V ± 22 mV
1.2 V ± 22 mV
1.3 V ± 22 mV
1.4 V ± 22 mV
1.5 V ± 22 mV
1.6 V ± 22 mV
1.7 V ± 22 mV
1.8 V ± 22 mV
1.9 V ± 22 mV
2.0 V ± 22 mV
2.1 V ± 22 mV
2.2 V ± 1.0%
2.3 V ± 1.0%
2.4 V ± 1.0%
2.5 V ± 1.0%
2.6 V ± 1.0%
2.7 V ± 1.0%
2.8 V ± 1.0%
2.9 V ± 1.0%
3.0 V ± 1.0%
3.1 V ± 1.0%
3.2 V ± 1.0%
3.3 V ± 1.0%
3.4 V ± 1.0%
3.5 V ± 1.0%
3.6 V ± 1.0%
3.7 V ± 1.0%
3.8 V ± 1.0%
3.9 V ± 1.0%
4.0 V ± 1.0%
4.1 V ± 1.0%
4.2 V ± 1.0%
4.3 V ± 1.0%
4.4 V ± 1.0%
4.5 V ± 1.0%
4.6 V ± 1.0%
4.7 V ± 1.0%
4.8 V ± 1.0%
4.9 V ± 1.0%
5.0 V ± 1.0%
Table 4
SOT-23-5
S-1002NB10I-M5T1U
S-1002NB11I-M5T1U
S-1002NB12I-M5T1U
S-1002NB13I-M5T1U
S-1002NB14I-M5T1U
S-1002NB15I-M5T1U
S-1002NB16I-M5T1U
S-1002NB17I-M5T1U
S-1002NB18I-M5T1U
S-1002NB19I-M5T1U
S-1002NB20I-M5T1U
S-1002NB21I-M5T1U
S-1002NB22I-M5T1U
S-1002NB23I-M5T1U
S-1002NB24I-M5T1U
S-1002NB25I-M5T1U
S-1002NB26I-M5T1U
S-1002NB27I-M5T1U
S-1002NB28I-M5T1U
S-1002NB29I-M5T1U
S-1002NB30I-M5T1U
S-1002NB31I-M5T1U
S-1002NB32I-M5T1U
S-1002NB33I-M5T1U
S-1002NB34I-M5T1U
S-1002NB35I-M5T1U
S-1002NB36I-M5T1U
S-1002NB37I-M5T1U
S-1002NB38I-M5T1U
S-1002NB39I-M5T1U
S-1002NB40I-M5T1U
S-1002NB41I-M5T1U
S-1002NB42I-M5T1U
S-1002NB43I-M5T1U
S-1002NB44I-M5T1U
S-1002NB45I-M5T1U
S-1002NB46I-M5T1U
S-1002NB47I-M5T1U
S-1002NB48I-M5T1U
S-1002NB49I-M5T1U
S-1002NB50I-M5T1U
SC-82AB
S-1002NB10I-N4T1U
S-1002NB11I-N4T1U
S-1002NB12I-N4T1U
S-1002NB13I-N4T1U
S-1002NB14I-N4T1U
S-1002NB15I-N4T1U
S-1002NB16I-N4T1U
S-1002NB17I-N4T1U
S-1002NB18I-N4T1U
S-1002NB19I-N4T1U
S-1002NB20I-N4T1U
S-1002NB21I-N4T1U
S-1002NB22I-N4T1U
S-1002NB23I-N4T1U
S-1002NB24I-N4T1U
S-1002NB25I-N4T1U
S-1002NB26I-N4T1U
S-1002NB27I-N4T1U
S-1002NB28I-N4T1U
S-1002NB29I-N4T1U
S-1002NB30I-N4T1U
S-1002NB31I-N4T1U
S-1002NB32I-N4T1U
S-1002NB33I-N4T1U
S-1002NB34I-N4T1U
S-1002NB35I-N4T1U
S-1002NB36I-N4T1U
S-1002NB37I-N4T1U
S-1002NB38I-N4T1U
S-1002NB39I-N4T1U
S-1002NB40I-N4T1U
S-1002NB41I-N4T1U
S-1002NB42I-N4T1U
S-1002NB43I-N4T1U
S-1002NB44I-N4T1U
S-1002NB45I-N4T1U
S-1002NB46I-N4T1U
S-1002NB47I-N4T1U
S-1002NB48I-N4T1U
S-1002NB49I-N4T1U
S-1002NB50I-N4T1U
Seiko Instruments Inc.
5
5 Page Rev.1.1_00
VOLTAGE DETECTOR WITH SENSE PIN
S-1002 Series
2. CMOS output product
Table 12
(Ta = +25°C unless otherwise specified)
Item Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage*1 −VDET
0.95 V ≤ VDD ≤ 10.0 V
1.0 V ≤ −VDET(S) < 2.2 V
2.2 V ≤ −VDET(S) ≤ 5.0 V
−VDET(S)
− 0.022
−VDET(S)
× 0.99
−VDET(S)
−VDET(S)
−VDET(S)
+ 0.022
−VDET(S)
× 1.01
V
V
Hysteresis width VHYS
−
−VDET −VDET −VDET
× 0.03 × 0.05 × 0.07
V
Current
consumption*2
ISS
VDD = 10.0 V, VSENSE = −VDET(S) + 1.0 V
− 0.50 0.90 μA
Operation voltage VDD
− 0.95 − 10.0 V
Output transistor
VDD = 0.95 V
0.59 1.00 − mA
Output current
IOUT
Nch
VDS*3 = 0.5 V
VSENSE = 0.0 V
Output transistor
Pch
VDS*3 = 0.5 V
VSENSE = 10.0 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 4.8 V
VDD = 4.8 V
VDD = 6.0 V
0.73 1.33 − mA
1.47 2.39 − mA
1.86 2.50 − mA
1.62 2.60 − mA
1.78 2.86 − mA
Detection voltage
temperature
coefficient*4
Δ−VDET
ΔTa • −VDET
Ta
=
−40°C
to
+85°C
− ±100 ±350 ppm/°C
Detection
delay time*5
tDET
VDD = 5.0 V
− 40 − μs
1
1
1
2
1
3
3
3
3
5
5
1
4
Release
delay time*6
tRESET
VDD = 5.0 V
−VDET(S) ≤ 2.4 V
2.4 V < −VDET(S)
− 40 − μs 4
− 80 − μs 4
SENSE pin
resistance
RSENSE
1.0 V ≤ −VDET(S) < 1.2 V
1.2 V ≤ −VDET(S) ≤ 5.0 V
5.0 19.0 42.0 MΩ 2
6.0 30.0 98.0 MΩ 2
*1. −VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 5 or Table 6)
*2. The current flowing through the SENSE pin resistance is not included.
*3. VDS: Drain-to-source voltage of the output transistor
*4. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ−VDET
ΔTa
[mV/°C]*1 = −VDET(S) (typ.)[V]*2 ×
Δ−VDET
ΔTa • −VDET
[ppm/°C]*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
*5. The time period from when the pulse voltage of 6.0 V → −VDET(S) − 2.0 V or 0 V is applied to the SENSE pin to when
VOUT reaches VDD / 2.
*6. The time period from when the pulse voltage of 0 V → −VDET(S) + 2.0 V or 6.0 V is applied to the SENSE pin to when
VOUT reaches VDD / 2.
Seiko Instruments Inc.
11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet S-1002.PDF ] |
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