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9N95 PDF даташит

Спецификация 9N95 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

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Номер произв 9N95
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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9N95 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
9N95
9A, 950V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 9N95 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
„ FEATURES
* RDS(ON) = 1.4@VGS = 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
2.Drain
1
Power MOSFET
TO-247
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N95L-T47-T
9N95G-T47-T
Package
TO-247
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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9N95 Даташит, Описание, Даташиты
9N95
Power MOSFET
„ ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
950 V
Gate-Source Voltage
VGSS
±30 V
Continuous Drain Current (TC = 25°C)
ID
9.0 A
Pulsed Drain Current (Note 2)
IDM
36 A
Avalanche Current (Note 2)
IAR 9.0 A
Avalanche Energy
Single Pulsed(Note 3)
Repetitive(Note 2)
EAS
EAR
900 mJ
28 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0 V/ns
Power Dissipation
Linear Derating Factor above TC = 25°C
PD
160 W
1.28 W/°C
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD9.0A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
50
0.78
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
BVDSS
VGS = 0 V, ID = 250μA
IDSS VDS = 950 V, VGS = 0 V
IGSSF
VGS = 30 V, VDS = 0 V
IGSSR
VGS = -30 V, VDS = 0 V
BVDSS/TJ ID=250μA, Referenced to 25°C
950
0.99
V
10 μA
100 nA
-100 nA
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 4.5A
3.0 5.0 V
1.05 1.4
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
2100 2730 pF
175 230 pF
14 18 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 475V, ID =11.0 A,
RG = 25(Note 1, 2)
VDS = 760V, ID = 11.0A,
VGS = 10 V (Note 1,2)
50 110 ns
120 250 ns
100 210 ns
75 160 ns
45 58 nC
13 nC
18 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9N95 Даташит, Описание, Даташиты
9N95
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD VGS = 0 V, IS = 9.0 A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0 V, IS = 9.0 A,
QRR dIF / dt =100 A/μs (Note 1)
Notes: 1. Pulse Test : Pulse width300μs, Duty cycle2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4 V
9.0 A
36 A
550 ns
6.5 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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