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RIC7S113L4 PDF даташит

Спецификация RIC7S113L4 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER».

Детали детали

Номер произв RIC7S113L4
Описание RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Производители International Rectifier
логотип International Rectifier логотип 

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RIC7S113L4 Даташит, Описание, Даташиты
PD-97828
RIC7S113L4
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Features
Product Summary
n Total dose capability to 100 kRads(Si)
n Floating channel designed for bootstrap operation
n Fully operational to +400V
n Tolerant to negative transient voltage
n dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching(typ.)
400V max.
2A / 2A
10 - 20V
120 & 100 ns
5 ns
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
n Hermetically Sealed
n Lightweight
Absolute Maximum Ratings
Description
The RIC7S113L4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 400 volts.
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board
mounted and still air conditions.
Symbol
Parameter
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVs/dt
PD
RthJC
RthJ-LEAD
RthJ-LID
TJ
TS
TL
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ TLEAD +25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Lead *
Thermal Resistance, Junction to Lid *
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
* Guaranteed by design, not tested
www.irf.com
Min. Max.
-0.5 VS + 20
— 400
VS - 0.5
-0.5
VB + 0.5
20
-0.5
-0.5
VCC - 20
VSS - 0.5
—
VCC + 0.5
VSS + 20
VCC + 0.5
VDD + 0.5
50
— 1.0
13 (Typ)
16.4
120 (Typ)
—
24 (Typ)
—
-55 125
-55 150
— 300
1.3(typical)
Units
V
V/ns
W
°C/W
°C
g
1
08/14/15









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RIC7S113L4 Даташит, Описание, Даташиты
RIC7S113L4
Pre-Irradiation
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. The VS and VSS offset ratings are tested
with all supplies biased at 15V differential.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Min.
VS + 10
-4
VS
10
0
VSS + 5
-5
VSS
Max.
VS + 20
400
VB
20
VCC
VSS + 20
5
VDD
Units
V
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical
characteristics are measured using the test circuit shown in Figure 3.
Symbol
ton
toff
tsd
tr
tf
MT
Tj = 25°C
Tj =
-55 to 125°C
Parameter
Min. Typ. Max. Min. Max. Units Test Conditions
Turn-On Propagation Delay
Turn-Off Propagation Delay
Shutdown Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Delay Matching, HS & LS Turn-On/Off
—
—
—
—
—
—
120 150 — 260
100 125 — 220
110 140 — 235
25 35 — 50
17 25 — 40
5 20 — —
VS = 0V
ns VS = 400V
VS = 400V
CL = 1000pf
CL = 1000pf
|Hton-Lton| or|Htoff-Ltoff|
Typical Connection
up to 5400V
VDD
HIN
SD
LIN
V SS
VCC
VDD
HIN
SD
LIN
VSS
HO
VB
VS
VCC
COM
LO
TO
LOA D
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RIC7S113L4 Даташит, Описание, Даташиты
Pre-Irradiation
RIC7S113L4
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are refer-
enced to VSS and are applicable to all three logic input pins: HIN, LIN and SD. The VO and IO parameters
are referenced to COM or VS and are applicable to the respective output pins: HO or LO.
Symbol
Parameter
VIH Logic “1” Input Voltage
VIL Logic “0” Input Voltage
VOH
VOL
ILK
IQBS
IQCC
IQDD
IIN+
IIN-
VBSUV+
VBSUV-
VCCUV+
VCCUV-
IO+
IO-
High Level Output Voltage, VBIAS - VO
Low Level Output Voltage, VO
Offset Supply Leakage Current
Quiescent VBS Supply Current
Quiescent VCC Supply Current
Quiescent VDD Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
VBS Supply Undervoltage Positive
Going Threshold
VBS Supply Undervoltage Negative
Going Threshold
VCC Supply Undervoltage Positive
Going Threshold
VCC Supply Undervoltage Negative
Going Threshold
Output High Short Circuit Pulsed
Current *
Output Low Short Circuit Pulsed
Current *
* Guaranteed by design, not tested
Tj = 25°C
Min.
3.1
6.4
9.5
12.5
—
—
—
—
—
—
—
—
—
—
—
—
7.5
Max.
—
—
—
—
1.6
3.8
6.0
8.3
1.2
0.1
50
230
340
30
40
1.0
9.7
7.0 9.4
7.4 9.6
7.0 9.4
2.0 —
2.0 —
Tj =
-55 to 125°C
Min. Max. Units
3.3 —
6.8 —
10 — V
13.3 —
— 1.6
— 3.6
— 5.7 V
— 7.9
— 1.5
— 0.1
— 250
— 500 µA
— 600
— 60
— 70
— 10
——
Test Conditions
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
VIN =VIH, IO = 0A
VIN =VIH, IO = 0A
VB = VS = 400V
VIN =0V or VDD
VIN =0V, or VDD
VIN =0V, or VDD
VIN = VDD
VIN = 0V
——
— —V
——
——
VO = 0V, VIN = VDD
A PW < 10 µs
——
VO = 15V, VIN = 0V
PW < 10 µs
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Номер в каталогеОписаниеПроизводители
RIC7S113L4RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVERInternational Rectifier
International Rectifier

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