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RJK0822SPN PDF даташит

Спецификация RJK0822SPN изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N Channel Power MOS FET».

Детали детали

Номер произв RJK0822SPN
Описание Silicon N Channel Power MOS FET
Производители Renesas
логотип Renesas логотип 

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RJK0822SPN Даташит, Описание, Даташиты
RJK0822SPN
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 7.9mtyp.(at VGS = 10V)
High speed switching
Low drive current
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
Rev.1.00
September.26.2007
Note: This product is designed for Electric Bike (E-Bike) application in China market.
Rev.1.00, September.26.2007, page 1 of 7









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RJK0822SPN Даташит, Описание, Даташиты
RJK0822SPN
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
Ratings
80
±20
80
320
80
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.1.00, September.26.2007, page 2 of 7









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RJK0822SPN Даташит, Описание, Даташиты
RJK0822SPN
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 80
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
IDSS
VGS(off)
RDS(on)
2
Forward transfer admittance
Input capacitance
|yfs|
Ciss
53
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Gate Resistance
Rg —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
td(on)
tr
td(off)
tf
VDF
trr
0.78
Notes: 4. Pulse test
Typ Max Unit
——V
— ± 0.5 µA
—1
µA
—4
V
7.9 9.8 m
129
3880
540
260
1.8
63
17
16
40
244
100
20
40
1.12
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, I D = 250uA
ID = 40 A, VGS = 10 V Note4
ID = 40 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 40 V
VGS = 10 V
ID = 80 A
VGS = 10 V, ID = 40 A
VDD 40 V
RL = 1.0
Rg = 10
IF = 80 A, VGS = 0 Note4
IF = 25 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.1.00, September.26.2007, page 3 of 7










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Номер в каталогеОписаниеПроизводители
RJK0822SPNSilicon N Channel Power MOS FETRenesas
Renesas

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