DataSheet26.com

BF1211 PDF даташит

Спецификация BF1211 изготовлена ​​​​«Philips» и имеет функцию, называемую «N-channel dual-gate MOS-FETs».

Детали детали

Номер произв BF1211
Описание N-channel dual-gate MOS-FETs
Производители Philips
логотип Philips логотип 

15 Pages
scroll

No Preview Available !

BF1211 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1211; BF1211R; BF1211WR
N-channel dual-gate MOS-FETs
Product specification
2003 Dec 16









No Preview Available !

BF1211 Даташит, Описание, Даташиты
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier
Excellent low frequency noise performance
Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good
DC stabilization.
APPLICATIONS
Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1211, BF1211R and BF1211WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
handbook, 2 c4olumns
3
1
Top view
BF1211 marking code: LFp
2
MSB014
Fig.1 Simplified outline (SOT143B).
handbook, 2 co3lumns
4
handbook, halfpage
3
4
21
Top view
BF1211R marking code: LHp
MSB035
Fig.2 Simplified outline (SOT143R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
cross-modulation
Tj junction temperature
2003 Dec 16
2
Top view
BF1211WR marking code: MK
1
MSB842
Fig.3 Simplified outline (SOT343R).
CONDITIONS
f = 1 MHz
f = 400 MHz
input level for k = 1% at
40 dB AGC
2
MIN.
25
100
TYP.
30
2.1
15
0.9
105
MAX.
6
30
180
40
2.6
30
1.6
UNIT
V
mA
mW
mS
pF
fF
dB
dBµV
− − 150 °C









No Preview Available !

BF1211 Даташит, Описание, Даташиты
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
ORDERING INFORMATION
TYPE NUMBER
BF1211
BF1211R
BF1211WR
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
VERSION
SOT143B
SOT143R
SOT343R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VDS drain-source voltage
ID drain current (DC)
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
BF1211; BF1211R
BF1211WR
Tstg storage temperature
Tj junction temperature
Ts 116 °C; note 1
Ts 122 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
MIN.
MAX.
6
30
±10
±10
UNIT
V
mA
mA
mA
180 mW
180 mW
65
+150
°C
150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-s)
thermal resistance from junction to soldering point
BF1211; BF1211R
BF1211WR
VALUE
185
155
UNIT
K/W
K/W
2003 Dec 16
3










Скачать PDF:

[ BF1211.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BF1210Dual N-channel dual gate MOSFETNXP Semiconductors
NXP Semiconductors
BF1211N-channel dual-gate MOS-FETsETC
ETC
BF1211N-channel dual-gate MOS-FETsPhilips
Philips
BF1211RN-channel dual-gate MOS-FETsETC
ETC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск