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PDF BF1102R Data sheet ( Hoja de datos )
| Número de pieza | BF1102R | |
| Descripción | Dual N-channel dual gate MOS-FETs | |
| Fabricantes | Philips | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R
Dual N-channel dual gate
MOS-FETs
Product specification
Supersedes data of 1999 Jul 01
2000 Apr 11
1 page  
Philips Semiconductors
Dual N-channel dual gate MOS-FETs
ALL GRAPHS FOR ONE MOS-FET
Product specification
BF1102; BF1102R
handbook,3h0alfpage
ID
(mA)
20
VG2-S = 4 V
3.5 V
3V
MGS360
2.5 V
2V
1.5 V
10
1V
0
0 0.4 0.8 1.2 1.6 2.0 2.4
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.3 Transfer characteristics; typical values.
30
handbook, halfpage
ID
(mA)
20
10
VG1-S = 1.5 V
MGS361
1.4 V
1.3 V
1.2 V
1.1 V
1V
0
0 2 4 6 8 10
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.4 Output characteristics; typical values.
handboo1k,6h0alfpage
IG1
(µA)
120
80
40
MGS362
VG2-S = 4 V
3.5 V
3V
2.5 V
2V
0
0 0.5 1 1.5 2 2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.5 Gate 1 current as a function of gate 1
voltage; typical values.
handbook,5h0alfpage
|yfs|
(mS)
40
VG2-S = 4 V
MGS363
3.5 V 3 V
30
2.5 V
20
10
2V
0
0 10 20 ID (mA) 30
VDS = 5 V.
Tj = 25 °C.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
2000 Apr 11
5
5 Page 
Philips Semiconductors
Dual N-channel dual gate MOS-FETs
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
DB
Product specification
BF1102; BF1102R
SOT363
E AX
y
6
54
pin 1
index
12
e1 bp
e
3
wM B
HE v M A
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
c
D
E
e
e1 HE Lp Q
v
w
y
mm
1.1
0.8
0.1
0.30 0.25
0.20 0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2 0.45 0.25
2.0 0.15 0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2000 Apr 11
IEC
REFERENCES
JEDEC
EIAJ
SC-88
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BF1102R.PDF ] | |
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