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4126D PDF даташит

Спецификация 4126D изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «NPN EPITAXIAL SILICON TRANSISTOR».

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Номер произв 4126D
Описание NPN EPITAXIAL SILICON TRANSISTOR
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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4126D Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
4126D
NPN EPITAXIAL SILICON TRANSISTOR
MIDDLING VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC 4126D is a middling voltage NPN power transistor. it
uses UTC’s advanced technology to provide customers with high
switching speed and high reliability, etc.
The UTC 4126D is suitable for commonly power amplifier
circuit, electronic ballasts and energy-saving light etc.
FEATURES
* High switching speed
* High reliability
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4126DL-T92-B
4126DG-T92-B
4126DL-T92-K
4126DG-T92-K
4126DL-T92-R
4126DG-T92-R
4126DL-T60-K
4126DG-T60-K
4126DL-TM3-T
4126DG-TM3-T
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-92
TO-92
TO-92
TO-126
TO-251
Pin Assignment
123
BCE
BCE
BCE
BCE
BCE
Packing
Tape Box
Bulk
Tape Reel
Bulk
Tube
4126DL-T60-K
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) T60: TO-126, TM3: TO-251, T92: TO-92
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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4126D Даташит, Описание, Даташиты
4126D
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
VCES
VCEO
350 V
200 V
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation
DC
Pulse (Note 2)
DC
Pulse (Note 2)
TO-92
TO-126/TO-251
VEBO
IC
ICP
IB
IBP
PC
7V
3A
6A
1A
2A
1.5 W
40 W
Junction Temperature
TJ 150 °C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
TO-92
TO-126/TO-251
SYMBOL
θJC
RATINGS
80
3.125
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)1
VCE(SAT)2
VBE(SAT)
hFE1
hFE2
fT
tS
tF
TEST CONDITIONS
IC=1mA, IB=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=350V, IE=0
VCE=200V, IB=0
VEB=7V, IC=0
IC=1A, IB=0.2A
IC=3A, IB=0.6A
IC=2A, IB=0.5A
IC=0.5A,VCE=5V
IC=2A,VCE=5V
IC=0.5A, VCE=10V
VCC=24V, IC=0.5A, IB1=-IB2=0.1A
MIN TYP MAX UNIT
350 V
200 V
7V
100 µA
50 µA
10 μA
0.8 V
1.6 V
1.5 V
8 50
7
4 MHz
4 μs
0.7 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4126D Даташит, Описание, Даташиты
4126D
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Collector Current vs. Collector-
Emitter Voltage (For TO-251)
3.6
IB=237.53mA
3.0
2.4
1.8 IB=123.92mA
1.2
0.6
00 1 2 3 4 5
Collector-Emitter Voltage, VCE (V)
Collector Current vs. Collector-
Emitter Voltage (For TO-126)
3.0
2.5
IB=158.35mA
2.0
1.5
1.0
IB=71.43mA
0.5
00 1 2 3 4 5 6
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталогеОписаниеПроизводители
4126HIGH FREQUENCY SWITCHING TRANSISTORSUnisonic Technologies
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4126DNPN EPITAXIAL SILICON TRANSISTORUnisonic Technologies
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