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даташит 3PN0402 PDF ( Datasheet )

3PN0402 Datasheet Download - Infineon

Номер произв 3PN0402
Описание Power-Transistor
Производители Infineon
логотип Infineon логотип 



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3PN0402 Даташит, Описание, Даташиты
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
2.0 m
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N04S3-02
IPI120N04S3-02
IPP120N04S3-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3PN0402
3PN0402
3PN0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
120
120
480
1880
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2007-04-30







No Preview Available !

3PN0402 Даташит, Описание, Даташиты
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=230 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=80 A
V GS=10 V, I D=80 A,
SMD version
40
2.1
-
-
-
-
-
-
3.0
-
-
-
1.65
1.35
-V
4.0
1 µA
100
100 nA
2.3 m
2
Rev. 1.0
page 2
2007-04-30







No Preview Available !

3PN0402 Даташит, Описание, Даташиты
Parameter
Symbol
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=1.3
-
-
-
-
-
-
-
11000 14300 pF
3000 3900
470 710
35 - ns
19 -
57 -
18 -
Gate Charge Characteristics2)
Gate to source charge
Q gs
- 54 70 nC
Gate to drain charge
Gate charge total
Q gd V DD=32 V, I D=80 A,
-
38 67
Q g V GS=0 to 10 V
- 160 210
Gate plateau voltage
V plateau
- 5 -V
Reverse Diode2)
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 120 A
- - 480
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
- 0.83 1.2 V
Reverse recovery time
Reverse recovery charge
t rr V R=20 V, I F=I S,
Q rr di F/dt =100 A/µs
- 70 - ns
- 145 - nC
1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 306 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2007-04-30










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