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Datasheet 13005BA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 13005BA | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
13005BA
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON POWER TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHM |  Unisonic Technologies | transistor |
130 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1300 | Crystal Clock Oscillators CRYSTAL CLOCK OSCILLATORS
WARRANTY CLAUSE
s 1300 Series
No. 1 2 3 4 5 6 7 8 9 Item Vibration Test Shock Test Drop Test Humidity Test Solder Heat Test Thermal Shock Test Terminal Strength Test Soldering Test Solvent Resistance MIL-STD-202F, TM204D, condition B MIL-STD-202F, TM213B, condition 9,800m/s  Nihon Dempa Kogyo oscillator | | |
| 2 | 1300-102-4xx | 2.54mm IDC Connector .100” (2.54 mm) IDC Connector
1300 SERIES “TERMACON”
PART NUMBER LEGEND
13X0-XXX-4XX
WIRE GAUGE (SEE TABLE 2) NUMBER OF POSITIONS (SEE TABLE 1) FOR STANDARD INSULATOR 0 = W/O LOCKING RAMP & W/O POLARIZING KEY 1 = W/ LOCKING RAMP & W/ POLARIZING KEY 2 = W/ LOCKING RAMP & W/O POLARIZING KEY FOR  Methode Electronics connector | | |
| 3 | 13001 | NPN Epitaxial Silicon Transistor 13001 NPN Epitaxial Silicon Transistor
Features
Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW
TO-126
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junct  Elite transistor | | |
| 4 | 13001S | D13001S R
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D13001S
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½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßÆ�  ETC data | | |
| 5 | 13001S | Environmental rated frequency amplification bipolar transistor R
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D13001S
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½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßÆ� ETC transistor | | |
| 6 | 13002AG | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
13002AG
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
DESCRIPTION
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
The UTC 13002AG is d Unisonic Technologies transistor | | |
| 7 | 13002AH | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
13002AH
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base bre Unisonic Technologies transistor | |
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