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BZA900AVL PDF даташит

Спецификация BZA900AVL изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Quadruple low capacitance ESD suppressor».

Детали детали

Номер произв BZA900AVL
Описание Quadruple low capacitance ESD suppressor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BZA900AVL Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D743
BZA900AVL series
Quadruple low capacitance ESD
suppressor
Product data sheet
Supersedes data of 2003 Apr 15
2003 Oct 20









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BZA900AVL Даташит, Описание, Даташиты
NXP Semiconductors
Quadruple low capacitance ESD
suppressor
Product data sheet
BZA900AVL series
FEATURES
Low diode capacitance
Low leakage current
SOT665 surface mount package
Common anode configuration.
APPLICATIONS
Communication systems
Computers and peripherals
Audio and video equipment.
PINNING
PIN
1
2
3
4
5
DESCRIPTION
cathode 1
common anode
cathode 2
cathode 3
cathode 4
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT665 package for 4-bit wide ESD transient
suppression.
MARKING
TYPE NUMBER
BZA956AVL
BZA962AVL
BZA968AVL
MARKING CODE
V3
V2
V1
handbook, halfpage5
4
123
1
3
2
4
5
MGW315
Fig.1 Simplified outline (SOT665) and symbol.
ORDERING INFORMATION
TYPE NUMBER
BZA956AVL
BZA962AVL
BZA968AVL
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 5 leads
plastic surface mounted package; 5 leads
plastic surface mounted package; 5 leads
VERSION
SOT665
SOT665
SOT665
2003 Oct 20
2









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BZA900AVL Даташит, Описание, Даташиты
NXP Semiconductors
Quadruple low capacitance ESD
suppressor
Product data sheet
BZA900AVL series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
IZ
IF
IFSM
Ptot
PZSM
Tstg
Tj
ESD
working current
continuous forward current
non-repetitive peak forward current
total power dissipation
non repetitive peak reverse power
dissipation
storage temperature
junction temperature
electrostatic discharge
CONDITIONS
MIN.
Tamb = 25 °C
Tamb = 25 °C
tp = 1 ms; square pulse
Tamb = 25 °C; note 2; see Fig.5
square pulse; tp = 1 ms
IEC 61000-4-2 (contact discharge)
HBM MIL-Std 883
65
15
10
Notes
1. DC working current limited by Ptot(max).
2. Device mounted on standard printed-circuit board.
MAX. UNIT
note 1
200
3.5
335
6
mA
mA
A
mW
W
+150
150
°C
°C
kV
kV
ESD STANDARDS COMPLIANCE
STANDARD
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
CONDITIONS
>15 kV (air); >8 kV (contact discharge)
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-s
PARAMETER
thermal resistance from junction to
ambient
thermal resistance from junction to
solder point; note 1
Note
1. Solder point of common anode (pin 2).
CONDITIONS
all diodes loaded
one diode loaded
all diodes loaded
VALUE
370
135
125
UNIT
K/W
K/W
K/W
2003 Oct 20
3










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Номер в каталогеОписаниеПроизводители
BZA900AVLQuadruple low capacitance ESD suppressorNXP Semiconductors
NXP Semiconductors

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