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8N50 PDF даташит

Спецификация 8N50 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 8N50
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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8N50 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
8N50
8A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 8N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 0.85@ VGS=10V, ID=4.5A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1
1
1
Power MOSFET
TO-220
TO-220F1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
8N50L-TA3-T
8N50G-TA3-T
8N50L-TF1-T
8N50G-TF1-T
8N50L-TF2-T
8N50G-TF2-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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8N50 Даташит, Описание, Даташиты
8N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
500
±30
V
V
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
ID
IDM
8(Note 2)
32(Note 2)
A
A
Avalanche Current (Note 3)
Avalanche Energy
Single Pulsed (Note 4)
Repetitive (Note 5)
TO-220
IAR
EAS
EAR
8A
320 mJ
12.5 mJ
125
Power Dissipation
TO-220F1
42 W
TO-220F2
TO-220
PD
62.5
1
Derate above 25°C
TO-220F1
0.33 W/°C
TO-220F2
0.5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 10mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25°C
5. ISD 8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
1
3
2
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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8N50 Даташит, Описание, Даташиты
8N50
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=400V, ID=8A
(Note 1, 2)
VDD=250V, ID=8A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=8A, VGS=0V
Body Diode Reverse Recovery Time
trr
IS=8A, VGS=0V, dIF/dt=50A/µs
(Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500 V
25 µA
+100 nA
-100 nA
2.0 4.0 V
0.62 0.85
650 pF
112 pF
21 pF
35 nC
7 nC
11 nC
50 ns
80 ns
260 ns
35 ns
8
32
1.4
800
A
A
V
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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