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11N60K-MT PDF даташит

Спецификация 11N60K-MT изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 11N60K-MT
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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11N60K-MT Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
11N60K-MT
Preliminary
11A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N60K-MT is an N-channel enhancement mode
power MOSFET. It uses UTC advanced planar stripe, DMOS
technology to provide customers perfect switching performance,
minimal on-state resistance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The UTC 11N60K-MT is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 1.00 @ VGS = 10 V, ID = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
11N60KL-TF2-T
11N60KG-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GD S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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11N60K-MT Даташит, Описание, Даташиты
11N60K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
600 V
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 3)
TC=25°C
TC=100°C
VGSS
ID
IDM
±30
11 (Note 2)
7 (Note 2)
44 (Note 2)
V
A
A
A
Single Pulsed Avalanche Energy(Note 4)
Peak Diode Recovery dv/dt (Note 5)
EAS
dv/dt
440 mJ
4.5 V/ns
Power Dissipation
Derate above 25°C
PD
48 W
0.38 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=7.27mH, IAS=11A, VDD= 50V, RG=25, Starting TJ=25°C
5. ISD 11A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
2.58
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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11N60K-MT Даташит, Описание, Даташиты
11N60K-MT
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
VDS=600V, TJ=125°C
Gate-Source Leakage Current
IGSS VDS=0V ,VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS= VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=30V, VGS=10V, ID=0.5A
(Note 1, 2)
VDD=50V, ID=1.3A, RG=3
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =11A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr VGS=0V, IS=11A,
QRR dIF/dt=100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
600 V
0.5 V/°C
10 µA
100 µA
±100 nA
2.0 4.0 V
0.61 1.00
850 1200
139 150
10 20
pF
pF
pF
35 55 nC
10 nC
9 nC
74 90 ns
95 120 ns
180 200 ns
96 120 ns
11 A
44 A
1.4 V
90 ns
1.5 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталогеОписаниеПроизводители
11N60K-MTN-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

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